Publications

• Article dans une revue

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

M. Werquin, Christophe Gaquière, Y. Guhel, N. Vellas, D. Theron, B. Boudart, Virginie Hoel, Marie Germain, Jean-Claude de Jaeger, S. Delage

The benefit of high drain-source bias voltages of GaN devices on sapphire substrates for high linearity applications is demonstrated. Whatever the output power densities considered, the corresponding intermodulation ratio is at least 20 dB better than usual PHEMT devices on GaAs substrates for the…

Electronics Letters, 2005, 41 (1), ⟨10.1049/el:20056735⟩. ⟨hal-01646906⟩

• Communication dans un congrès

Noise in SOI MOSFETs and gate-all-around transistors

B. Iniguez, A. Lazaro, H.A. Hamid, G. Pailloncy, Gilles Dambrine, Francois Danneville

18th International Conference on Noise and Fluctuations, ICNF 2005, 2005, Salamanca, Spain. ⟨hal-00125321⟩

• Communication dans un congrès

Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

R. Rengel, J. Mateos, T. Gonzales, D. Pardo, Gilles Dambrine, Francois Danneville, M.J. Martin

2005, pp.497-502. ⟨hal-00125307⟩

• Communication dans un congrès

Hydrous profile modeling in porous materials from reflection coefficient measurement at 2.45 GHz

D. Glay, T. Lasri

2005, pp.206-213. ⟨hal-00125334⟩

• Communication dans un congrès

High mobility InAs/AlInAs metamorphic heterostructures on InP (001)

X. Wallart, J. Lastennet, F. Mollot

2005, pp.94-97. ⟨hal-00125391⟩

• Communication dans un congrès

Role of interface on the direct tunneling and the inelastic tunneling behaviors in metal/alkylsilane/silicon junctions

D. Vuillaume, D. K. Aswal, David Guérin, S. Lenfant, C. Petit, G. Salace, J. V. Yakhmi

French-Russian workshop on nanosciences and nanotechnologies, 2005, Lille, France. ⟨hal-00125618⟩

• Communication dans un congrès

Metamorphic growth of InAs/InAlAs heterostructures on InP(001) substrates

X. Wallart, J. Lastennet, F. Mollot

13th European Molecular Beam Epitaxy Workshop, Euro-MBE, 2005, Grindelwald, Switzerland. ⟨hal-00125392⟩

• Article dans une revue

As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system

S. Dhellemmes, S. Godey, A. Wilk, X. Wallart, F. Mollot

Journal of Crystal Growth, 2005, 278, pp.564-568. ⟨hal-00125361⟩

• Communication dans un congrès

A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s photoreceiver

G. Wolf, H. Happy, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, Gilles Dambrine

2005, pp.27-29. ⟨hal-00125306⟩

• Communication dans un congrès

Low power 23 GHz and 27 GHz distributed cascode amplifiers in a standard 130 nm SOI CMOS process

C. Pavageau, A. Siligaris, L. Picheta, Francois Danneville, M. Si Moussa, J.P. Raskin, D. Vanhoenacker-Janvier, J. Russat, N. Fel

2005, pp.2243-2246. ⟨hal-00125311⟩