Publications

• COMM

Mobile communication and localization techniques in underground mines

M. Lienard, Pierre Degauque, Pierre Laly

IEEE International Conference on Vehicular Technology, 2004, Los Angeles, United States. ⟨hal-00142019⟩

• COMM

Développement de modules électroniques permettant de détecter la présence d'une personne ou d'une partie de corps humain

D. Leclercq, P. Godts

Action de Recherche Concertée en Ingénierie Urbaine, 2004, Lille, France. ⟨hal-00140979⟩

• COMM

La résine photolithographiable SU-8 aspects chimiques et technologiques de la fabrication de microsystèmes

K. Chuda, X. Coqueret, Julien Carlier, S. Arscott, V. Thomy, C. Druon, P. Tabourier, J.C. Camart

Polymérisations sous Rayonnement, PolyRay, 2004, Villeneuve d Ascq, France. ⟨hal-00140980⟩

• COMM

Integration of Schottky source/drain in advanced MOS technology : the SODAMOS project

Emmanuel Dubois, Christophe Krzeminski, Guilhem Larrieu, Xavier Baie, Xing Tang, N. Recklinger, Vincent Bayot, E. Robilliart, B. Froment, J. Katcki

13th Melari/NID Workshop, 2004, Athens, Greece. ⟨hal-00141008⟩

• COMM

Design of silicon-pTMDS bioMEMS by cold RPECVD

Bertrand Bocquet, Nour Eddine Bourzgui, Yannick Guhel, Vianney Mille

Nonimaging Optics and Efficient Illumination Systems, Aug 2004, Denver, CO, United States. pp.118-129. ⟨hal-00140776⟩

• ART

NDE of two-layered mortar samples using high-frequency Rayleigh waves

M. Goueygou, Bogdan Piwakowski, A. Fnine, M. Kaczmarek, F. Buyle-Bodin

Ultrasonics, 2004, 42, pp.889-895. ⟨hal-00140727⟩

• COMM

Self-assembled molecular rectifying diodes on silicon

Stéphane Lenfant, Dominique Vuillaume, Christophe Krzeminski, Guy Allan, Christophe Delerue

European Materials Research Society Spring Meeting, 2004, Strasbourg, France. ⟨hal-00140752⟩

• ART

Noise modeling in fully depleted SOI MOSFETs

G. Pailloncy, B. Iniguez, Gilles Dambrine, J.P. Raskin, Francois Danneville

Solid-State Electronics, 2004, 48, pp.813-825. ⟨hal-00133880⟩

• COMM

Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

Jean-Sebastien Galloo, Emmanuelle Pichonat, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz, Isabelle Huynen

We have developed technolow based on GaInAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-Branch Junctions (TBJs), YBranch Junctions (YBJs)). Then we present DC Characterization of TBJs to show the transition from ballistic to ohmic…

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, May 2004, Kagoshima, Japan. pp.378-381, ⟨10.1109/ICIPRM.2004.1442734⟩. ⟨hal-00133896⟩

• COMM

Bruit haute fréquence dans les transistors MOS sur SOI : méthodes de caractérisations et de modélisations

G. Pailloncy

WORKSHOP Laboratoire Commun IEMN/ST Microelectronics, 2004, Crolles, France. ⟨hal-00133898⟩