Publications

• Article dans une revue

Experimental study of hot electron inelastic scattering rate in p-type InGaAs

D. Sicault, R. Teissier, F. Pardo, J.-L. Pelouard, F. Mollot

The inelastic scattering rates of electrically injected minority hot electrons measured using a continuous-wave spatially resolved electroluminescence spectroscopy are reported. To our knowledge, this constitutes direct experimental determination of this parameter related to the individual…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65 (12), pp.121301.1-121301.4. ⟨10.1103/PhysRevB.65.121301⟩. ⟨hal-00324283⟩

• Article dans une revue

Theory of acoustic scattering by supported ridges at a solid-liquid interface

Jerome O. Vasseur, A. Khelif, J. Vasseur, Ph. Lambin, Bahram Djafari-Rouhani, P. Deymier

Physical Review E , 2002, 65 (3), ⟨10.1103/PhysRevE.65.036601⟩. ⟨hal-03302025⟩

• Article dans une revue

0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer

S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar

New In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2-in Silicon substrate with 0.12 μm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic…

IEEE Electron Device Letters, 2002, 23 (2), pp.73-75. ⟨10.1109/55.981310⟩. ⟨hal-00147840⟩

• Article dans une revue

A highly directive dipole antenna embedded in a Fabry-Perot type cavity

Tahsin Akalin, Jérôme Danglot, Olivier Vanbésien, Didier Lippens

We investigate the origin of the directivity of a dipole antenna embedded in a dielectric slab Fabry-Perot cavity. It is shown that the focusing effect is due to the angular selection rules in the Bragg-type mirror and is directly correlated to the frequency selectivity of the cavity. For a 6 GHz…

IEEE Microwave and Wireless Components Letters, 2002, 12 (2), pp.48-50. ⟨10.1109/7260.982873⟩. ⟨hal-00148630⟩

• Chapitre d'ouvrage

Micro-actionneurs en alliages à mémoire de forme

N. Chaillet, L. Buchaillot, J. Abadie, I. Roch, C. Lexcellent

CUGAT O. Micro-actionneurs électroactifs, Hermès Sciences, pp.179-223, 2002. ⟨hal-00132049⟩

• Article dans une revue

Magnonic spectral gaps and discrete transmission in serial loop structures

A Mir, H Al Wahsh, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski, Jerome O. Vasseur

Journal of Physics: Condensed Matter, 2002, 14 (3), pp.637-655. ⟨10.1088/0953-8984/14/3/331⟩. ⟨hal-03302129⟩

• Article dans une revue

Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ?

Xavier Wallart, Catherine Priester, D. Deresmes, Thomas Gehin, Francis Mollot

Applied Physics Letters, 2002, 81, pp.1060-1062. ⟨hal-00018491⟩

• Article dans une revue

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot

Applied Physics Letters, 2002, 80, pp.4151. ⟨hal-00018489⟩

• Autre publication scientifique

Conception et réalisation d'un amplificateur faible bruit à 2,4 GHz en technologie CMOS fortement submicronique

E. Fall

2002. ⟨hal-00162704⟩

• Communication dans un congrès

Etude et réalisation de transducteurs millimétriques

Anne-Christine Hladky, S. Alkoy, D.C. Markley, R.J. Meyer, W.J. Hughes, J. Cochran, R.E. Newnham

2002, pp.256-259. ⟨hal-00147778⟩