Publications
Affichage de 14661 à 14670 sur 16064
Les transistors à effet de champ pour l'amplification de puissance microonde : état de l'art et perspectives
Jean-Claude de Jaeger
5èmes Journées Microondes et Electromagnétisme, JMET 2002, 2002, Toulouse, France. ⟨hal-00149737⟩
Beam forming through the use of electromagnetic band gap materials
Tahsin Akalin, G. Wolf, S. Arscott, Xavier Mélique, Olivier Vanbésien, Eric Estebe, Didier Lippens
25th ESA Antenna Workshop, 2002, Noordwijk, Netherlands. ⟨hal-00148652⟩
Emission basse fréquence par interaction non-linéaire d'ondes ultrasonores
Philippe Pernod, Y. Pylnov, Vladimir Preobrazhensky
Actes du 6ème Congrès Français d'Acoustique, CFA 2002, 2002, Lille, France. ⟨hal-00148704⟩
Design and simulation of a two-section Fabry-Perot sampled grating distributed bragg reflector laser for dense wavelength-division multiplexing applications
M.H. Mourad, D. Marcenac, Jean-Pierre Vilcot, Didier Decoster
Optical Engineering, 2002, 41, pp.479-483. ⟨hal-00149622⟩
Monte Carlo study of electron transport in InAs HEMT structures
Olivier Bonno, Jean-Luc Thobel, François Dessenne, Hervé Boutry
Proceedings of the 13th Workshop on Physical Simulation of Semiconductor Devices, 2002, Leeds, United Kingdom. ⟨hal-00148625⟩
Matching of ultrasonic transducer : interest of the glue layer
Dorothée Debavelaere-Callens, C. Bruneel, Jamal Assaad
2002, pp.2408. ⟨hal-00149910⟩
Improvement of performance at 60 GHz of metamorphic HEMT on GaAs using double recess technology
M. Ardouin, B. Bonte, M. Zaknoune, Y. Cordier, S. Bollaert, D. Theron, Jean-Claude de Jaeger
25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chernogolovka, Russia. ⟨hal-00149713⟩
Charge transport in some molecular devices : self-assembled molecular rectifiers and DNA molecules
D. Vuillaume
6th Conference on Molecular-Scale Electronics, 2002, Key West, FL, United States. ⟨hal-00148708⟩
Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373K
Mohamed Boutchich, Katir Ziouche, Pascale Godts, Didier Leclercq
IEEE Electron Device Letters, 2002, 23 (3), pp.139-141. ⟨10.1109/55.988817⟩. ⟨hal-00148729⟩
Microcapteurs de rayonnement infrarouge en technologie silicium
Mohamed Boutchich
2002. ⟨hal-00148731⟩