Publications

Affichage de 14901 à 14910 sur 16104


  • Communication dans un congrès

Effect of the load impedance on the power performance at 4 GHz

Christophe Gaquière, Nicolas Vellas, Frédéric Bue-Erkmen, Yannick Guhel, B. Boudart, Jean-Claude de Jaeger

11th European Heterostrucrure Technology Workshop, HETECH 01, 2001, Padova, Italy. ⟨hal-00152678⟩

  • Communication dans un congrès

Caractérisation optique de modulateurs acousto-électro-optiques à puits quantiques GaAs/Ga1-xAIxAs

F. Sainte-Rose, Joseph Gazalet, Fabrice Lefebvre, Tadeusz Gryba

8èmes Journées Nationales Micro et Optoélectronique, JNMO'2001, 2001, Aussois, France. ⟨hal-00151735⟩

  • Article dans une revue

Frequency-resolvel tunnel spectroscopy in nanocrystalline silicon superlattices

Leonid Tsybeskov, G.F. Grom, Rahul G. Krishnan, Laurent Montès, P.M. Fauchet, D. Kovalev, J. Diener, Victor Timoshenko, F. Koch, John P. Mccaffrey, Jean-Marc Baribeau, David J. Lockwood, Yann-Michel Niquet, Christophe Delerue, Guy Allan

EPL - Europhysics Letters, 2001, 55, pp.552-558. ⟨hal-00152534⟩

  • Article dans une revue

Fermi-edge singularities in AlxGa1-xAs quantum wells: extrinsic versus many-body scattering processes

Yann-Michel Niquet, Christophe Delerue, Michel Lannoo, Guy Allan

Physical Review Letters, 2001, 87, 24, pp.249903. ⟨hal-00018594⟩

  • Article dans une revue

Growth of strained GaSub 1-xIn Sub x players on GaP (001) by gas source molecular beam epitaxy similarities and differences with the growth of strained arsenides

X. Wallart, D. Deresmes, F. Mollot

Journal of Crystal Growth, 2001, 227-228, pp.255. ⟨hal-00018481⟩

  • Article dans une revue

Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by Gas Source Molecular Beam Epitaxy

X. Wallart, D. Deresmes, F. Mollot

Applied Physics Letters, 2001, 78, pp.2961. ⟨hal-00018480⟩

  • Article dans une revue

On the non top-on-top vertical correlation in multistacked systems : the role of alloy spacer layers

C. Priester, G. Grenet

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, 12, pp.125312/1-5. ⟨hal-00018657⟩

  • Communication dans un congrès

MEMS for mobile communication

E. Quevy, C. Renaux, L. Buchaillot, D. Flandre, D. Collard

Proceedings of the 13th European Microelectronics and Packaging Conference, EMPC 2001, 2001, Strasbourg, France. ⟨hal-00152220⟩

  • Communication dans un congrès

A 5 mW-290 GHz heterostructure barrier tripler in a waveguide configuration

T. David, M. Guillon, S. Arscott, Alain Maestrini, Tahsin Akalin, Benoît Lecomte, Jorge Carbonell, Michel Chaubet, Patrick Mounaix, Gérard Beaudin, Didier Lippens

An output power of 5 mW has been demonstrated at 290 GHz by tripling a primary signal in the W band. The nonlinear devices are high performance InP-based heterostructure barrier varactors mounted in mechanically tuned waveguide harmonic multiplier. The flange-to-flange maximum efficiency was 5%…

2001 IEEE MTT-S International Microwave Symposium Digest, May 2001, Phoenix, AZ, United States. pp.1661-1664, ⟨10.1109/MWSYM.2001.967224⟩. ⟨hal-02347990⟩