Publications

Affichage de 14901 à 14910 sur 16407


  • Article dans une revue

The GaN yellow luminescence centre observed using optoelectronic modulation spectroscopy

C.H. Chiu, F. Omnes, Christophe Gaquière, P. Gibart, J.G. Swanson

Journal of Physics D: Applied Physics, 2002, 35, pp.609-614. ⟨hal-00250398⟩

  • Article dans une revue

Ineslastic electron tunnelling spectroscopy : capabilities and limitations in metal-oxide-semiconductor devices

G. Salace, C. Petit, D. Vuillaume

Journal of Applied Physics, 2002, 91, pp.5896-5901. ⟨hal-00148712⟩

  • Article dans une revue

Dynamics of solid-state parametric WPC amplifier of ultrasound with matching layer at interface of active medium-liquid

Andrey Brysev, R. Klopotov, Leonid Krutyansky, Philippe Pernod, Vladimir L. Preobrazhensky

Physics of Vibrations, 2002, 10, pp.121-124. ⟨hal-00250217⟩

  • Article dans une revue

Experimental study of hot-electron inelastic scattering rate in p-type InGaAs

D. Sicault, R. Teissier, F. Pardo, J.L. Pelouard, F. Mollot

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, pp.121301/1-4. ⟨hal-00250208⟩

  • Communication dans un congrès

Detection and characterisation of underground cavities using high resolution seismic (HRSR)

L. Driad, Bogdan Piwakowski

8th Meeting of Environmental and Engineering Geophysics Society-European Section, 2002, Portugal. pp.31-34. ⟨hal-00250190⟩

  • Communication dans un congrès

Measurement of ultrasonic attenuation and Rayleigh wave dispersion for testing concrete with subsurface damage

M. Goueygou, S. Ould Naffa, Bogdan Piwakowski, A. Fnine, F. Buyle-Bodin

IEEE International Ultrasonics Symposium, 2002, Germany. pp.1/861-864, ⟨10.1109/ULTSYM.2002.1193533⟩. ⟨hal-00250219⟩

  • Article dans une revue

Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector

S.L. Bravina, Eric Cattan, N.V. Morozovsky, Denis Remiens

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2002, 5, pp.89-94. ⟨hal-00250394⟩

  • Article dans une revue

Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ?

Xavier Wallart, Catherine Priester, D. Deresmes, Thomas Gehin, Francis Mollot

Applied Physics Letters, 2002, 81, pp.1060-1062. ⟨hal-00018491⟩