Publications

• Communication dans un congrès

Securing Cognitive Radio Networks via Relay and Jammer-Based Energy Harvesting on Cascaded Channels

Deemah Tashman, Walaa Hamouda, Iyad Dayoub

Physical-layer security (PLS) is examined in this paper for an underlay cognitive radio network (CRN). Two secondary users (SUs) interact through a relay that is equipped with multiple antennas and harvests energy from the SU transmitter's messages via a power splitting (PS) approach.…

ICC 2023 - IEEE International Conference on Communications, May 2023, Rome, Italy. pp.3246-3251, ⟨10.1109/ICC45041.2023.10278964⟩. ⟨hal-04372680⟩

• Communication dans un congrès

Full frequency duplex link in the 300 GHz band, Liaison fréquentielle bidirectionnelle simultanée dans la bande des 300 GHz

A Renau, C Maye, D Wrana, S Haussmann, I Kallfass, L John, B K Jung, U Hellrung, P Schlegel, T Kuerner, R P Braun, Y Leiba, T Kawanishi, S Hisatake, K Kondou, P. Szriftgiser, Guillaume Ducournau

We present here a demonstration of THz transmission system enabling a full frequency duplex link in the 300 GHz band. This system is coupling a super-heterodyne architecture, E-band modems and duplexing system at 300 GHz., Nous présentons ici une démonstration d'un système de transmission THz permettant une liaison fréquentielle bidirectionnelle simultanée dans la bande des 300 GHz. Ce système associe une architecture super-hétérodyne, des modems en bande E et un système de duplexage à 300 GHz.

GDR NanoTeraMIR, May 2023, Dunkerque, France. ⟨hal-04160780⟩

• Communication dans un congrès

Power Handling of GaN Schottky Diodes on Semi-Insulating Ammonothermal GaN Substrate at 94 GHz

Mahmoud ABOU DAHER, Hugo Bouillaud, Pawel Prystawko, Michal Bockowski, Etienne Okada, Malek Zegaoui, Guillaume Ducournau, Yannick Roelens, Mohammed Zaknoune

In this paper, we report electrical results and handling power results of different Schottky diodes based on 620 nm of n- Gallium Nitride (GaN) fabricated on ammonothermal GaN substrate. The breakdown voltage obtained is 115 V/µm. Diodes held 29.6 dBm at zero bias and we detected an output voltage…

WOCSDICE-EXMATEC, May 2023, Palerme (Italie), Italy. ⟨hal-04517550⟩

• Communication dans un congrès

Preliminary results on uncooled LSMO THz bolometers

Thomas Quinten, Yoann Lechaux, Victor Pierron, Chantal Gunther, Laurence Méchin, Jean-Francois Lampin, Etienne Okada, Benjamin Walter, Marc Faucher, Bruno Guillet

Journées nationales GDR NanoTeraMIR (Nanodispositifs pour THz et le MIR), GDR NanoTeraMIR, May 2023, Dunkerque (59140), France. ⟨hal-04402456⟩

• Poster de conférence

Communicating with living neurons using a next-generation bidirectional neurobiohybrid interface with optimized energy efficiency, Communiquer avec des neurones vivants avec une interface neurobiohybride bidirectionnelle de nouvelle génération avec une efficacité énergétique optimisée

Nathan Schoonjans, Virginie Hoel, Dimitri Henniquau, Vanessa Avramovic, Mohamed Lamine Fayçal Bellaredj, Pascal Mariot, Valerio Farfariello, David Delcroix, Rédha Kassi, A. Cappy, Alexis Vlandas, Christel Vanbesien

Recent breakthroughs in the field of neural prostheses have shed light on innovative approaches for restoring lost functions, such asspeech in completely paralyzed patients or the ability to walk in para/tetraplegic patients. Beyond the impressive results achieved and the evident benefit for the…

Neurofrance 2023, May 2023, Lyon, France. ⟨hal-04119733⟩

• Article dans une revue

Field and Thermal Emission Limited Charge Injection in Au–C60–Graphene van der Waals Vertical Heterostructures for Organic Electronics

Jacopo Oswald, Davide Beretta, Michael Stiefel, Roman Furrer, Sebastian Lohde, Dominique Vuillaume, Michel Calame

Among the family of 2D materials, graphene is the ideal candidate as top or interlayer electrode for hybrid van der Waals heterostructures made of organic thin films and 2D materials due to its high conductivity and mobility and its inherent ability of forming neat interfaces without diffusing in…

ACS Applied Nano Materials, 2023, ⟨10.1021/acsanm.3c01090⟩. ⟨hal-04105099⟩

• Article dans une revue

Wide-Temperature-Range Flexible Micro-Supercapacitors Using Liquid Crystal Gel Electrolyte

Min Li, Chen Jia, Yurdanur Türker, Mert Umut Özkaynak, Libo Zhao, Danyu Zhang, Yunyun Luo, Guoxi Luo, Lu Wang, Yong Xia, Zhikang Li, Nan Zhu, Ping Yang, Koray Bahadır Dönmez, Rabah Boukherroub, Zhuangde Jiang

In this work, to construct a sunlight-powered energy storage system, single wall carbon nanotubes (SWCNTs)-based symmetric micro-supercapacitors (MSCs) were fabricated by a one-step, facile spraying method. The electrodes exhibited satisfactory conductivity with a sheet resistance of 275 Ω/sq.…

ACS Applied Energy Materials, 2023, 6 (10), pp.5230-5238. ⟨10.1021/acsaem.3c00144⟩. ⟨hal-04130827⟩

• Communication dans un congrès

Machine Learning-Based Monostatic Microwave Radar for Building Material Classification

Nawal Alsaleh, Denis Pomorski, Mohamed Sebbache, Kamel Haddadi

2023 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), May 2023, Kuala Lumpur, Malaysia. pp.1-5, ⟨10.1109/I2MTC53148.2023.10176071⟩. ⟨hal-04182234⟩

• Communication dans un congrès

Evaluation of the electrical properties of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy

Caroline Elias, Sebastien Chenot, Florian Bartoli, Seif El-Whibi, Jean-Claude de Jaeger, Marie Lesecq, Maxime Hugues, Yvon Cordier

In this work, the electrical properties of ScAlN/GaN high electron mobility transistor (HEMT) heterostructures grown by ammonia source molecular beam epitaxy are studied. The effect of growth temperature and ScAlN barrier thickness on 2DEG carrier density is investigated with capacitance-voltage…

Wocsdice - Exmatec 2023 Conference, May 2023, Palermo, Italy. ⟨hal-04444068⟩

• Communication dans un congrès

Comparison of Sub-Micron thick AlGaN/GaN and AlN/GaN HEMTs on Silicon for RF applications

Elodie Carneiro, Stéphanie Rennesson, Fabrice Semond, F Medjdoub

In this paper, a performance comparison between sub-micron thick AlGaN/GaN and AlN/GaN HEMT devices are reported. Various gate lengths have been employed in order to analyze the impact on DC and RF performances. Electrical characteristics of these structures for 100 nm gate length show a higher…

46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023), May 2023, Palerme (Italie), Italy. ⟨hal-04438164⟩