Publications

• Communication dans un congrès

Efficient non-quasi-static MOSFETs model for circuit simulation

Emmanuel Dubois, E. Robilliart

International Electron Devices Meeting, Dec 1995, Washington, United States. pp.945-948, ⟨10.1109/IEDM.1995.499372⟩. ⟨hal-04248390⟩

• Communication dans un congrès

Analysis of the charge injection in MOS analog switches using physical models

E. Robilliart, Emmanuel Dubois

Proc. of the International Semiconductor Device Research Symposium ISDRS’95, Dec 1995, Charlottesville, United States. ⟨hal-04249104⟩

• Communication dans un congrès

Second and third order one-dimensional non-quasi-static bipolar transistor models

E. Robilliart, Emmanuel Dubois

Proc. of the International Semiconductor Device Research Symposium ISDRS’95, Dec 1995, Charlottesville, United States. ⟨hal-04249098⟩

• Article dans une revue

Analysis of the propagation of plane acoustic waves in passive periodic materials using the finite element method

Philippe Langlet, Anne-Christine Hladky, Jean‐noël Decarpigny

The finite element approach has been previously used, with the help of the ATILA code, to model the scattering of acoustic waves by single or doubly periodic passive structures ͓A. C. Hladky-Hennion et al., J. Acoust. Soc. Am. 90, 3356-3367 ͑1991͔͒. This paper presents a new extension of this…

Journal of the Acoustical Society of America, 1995, 98 (5), pp.2792-2800. ⟨10.1121/1.413244⟩. ⟨hal-03300156⟩

• Article dans une revue

Auger and Coulomb Charging Effects in Semiconductor Nanocrystallites

Christophe Delerue, Michel Lannoo, Guy Allan, Évelyne Martin, Irina Mihalcescu, Jean-Claude Aimé Vial, Robert Romestain, F. Muller, Ahmad Bsiesy

Theoretical and experimental results are presented providing evidence for fast Auger recombination in silicon nanocrystallites. Calculations give nonradiative lifetimes in the 1 ns range. Luminescence experiments on porous silicon exhibit a saturation at high excitation power. The Auger effect…

Physical Review Letters, 1995, 75 (11), pp.2228 - 2231. ⟨10.1103/PhysRevLett.75.2228⟩. ⟨hal-01628592⟩

• Article dans une revue

Lateral band gap modulation by controlled elastic relaxation of strained multiquantum well structures on InP

Jean -Louis Leclercq, Pierre Viktorovich, X. Letartre, M. Nuban, Michel Gendry, T. Benyatou, G. Guillot, G. Fierling, C. Priester

Applied Physics Letters, 1995, 67 (9), pp.1301-1303. ⟨10.1063/1.114404⟩. ⟨hal-02119492⟩

• Ouvrages

HELENA - Hemt Electrical Properties and Noise Analysis Software and user's manual (Microwave Software Library)

H. Happy, A. Cappy

Artech House, pp.Disk edition, 1995. ⟨hal-00132555⟩

• Article dans une revue

Brillouin-zone mapping of the existence conditions for interface bilayer spin waves

H. Puszkarski, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski

Physical Review B, 1995, 51 (22), pp.16008-16015. ⟨10.1103/PhysRevB.51.16008⟩. ⟨hal-04070291⟩

• Article dans une revue

Saturation and voltage quenching of porous-silicon luminescence and the importance of the Auger effect

Irina Mihalcescu, Jean-Claude Aimé Vial, Ahmad Bsiesy, F. Muller, Robert Romestain, Évelyne Martin, Christophe Delerue, Michel Lannoo, Guy Allan

Two important observations for porous silicon, the saturation and the voltage selective quenching of photoluminescence, are presented. Their similarities are pointed out and discussed in two phenomenological models: the saturation of the absorption and an Auger effect. The consequences of carrier…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1995, 51 (24), pp.17605 - 17613. ⟨10.1103/PhysRevB.51.17605⟩. ⟨hal-01628598⟩

• Article dans une revue

Surface and interface s-polarized optical waves in superlattices

Abdellatif Akjouj, Ml Bah, Ehel Boudouti, B Djafari-Rouhani, Leonard Dobrzynski

Vacuum, 1995, 46 (5-6), pp.621-624. ⟨10.1016/0042-207X(94)00144-8⟩. ⟨hal-04070921⟩