Publications

Affichage de 171 à 180 sur 16055


  • COUV

Nanoparticles: An Historical and Science In Society Review

Raffaele Pisano, Andrea Durlo

Raffaele Pisano. Nanoscience & Nanotechnologies. Critical Problems, Science in Society, Historical Perspectives, Springer, pp.631-667, 2025, Nanotechnology in the Life Sciences, 978-3-031-85121-6. ⟨10.1007/978-3-031-85122-3_16⟩. ⟨hal-04767294⟩

  • COUV

Physics Scanning Devices and Nanoscale Techniques: An Historical Perspective

Raffaele Pisano, Andrea Durlo

Raffaele Pisano. Nanoscience & Nanotechnologies. Critical Problems, Science in Society, Historical Perspectives, Springer, pp.475-524, 2025, Nanotechnology in the Life Sciences, 978-3-031-85121-6. ⟨10.1007/978-3-031-85122-3_13⟩. ⟨hal-04767286⟩

  • COMM

7 GHz integrated modulator at 8.5 µm wavelength

Javier Huertas Pedroche, Victor Turpaud, Lucia Luca, Adel Bousseksou, Hamza Dely, Gia Long Ngo, Stefano Calcaterra, Davide Impelluso, Afonso de Cerdeira Oliveira, Victor Merupo, Emilien Peytavit, Jean-François Lampin, Stefano Barbieri, Jacopo Frigerio, Raffaele Colombelli, Giovanni Isella, Delphine Marris-Morini

Mid-infrared (mid-IR) spectroscopic systems have gained growing importance due to their ability to operate in the 2-20 µm spectral range, what makes them very useful in different applications such as defense, food safety control [1] or medical diagnosis [2]. This spectral range includes the…

XVIIth International Conference on Mid-IR Optoelectronics: Materials and Devices (MIOMD 2025), Jul 2025, Vienne, Austria. ⟨hal-05238032⟩

  • ART

Electronic properties of the selenium passivated GaP(111)B surface: Towards growth of large scale quasi-van der Waals 2D/3D heterostructure

Niels Chapuis, Corentin Sthioul, Aymen Mahmoudi, Meryem Bouaziz, Christophe Coinon, Louis Thomas, Davide Romanin, Gilles Patriarche, Fabrice Oehler, Abdelkarim Ouerghi, Xavier Wallart

Physical Review Materials, 2025, 9 (7), pp.074002. ⟨10.1103/pv8b-89gg⟩. ⟨hal-05165772⟩

  • COMM

Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterization

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Adrien Bidaud, Mohammed El Amrani, Thibaud Guillemin, Maroun Dagher, Vishwajeet Maurya, Florian Bartoli, Eric Frayssinet, Farid Medjdoub, Julien Buckley, Yvon Cordier, Matthew Charles, Dominique Planson, Cyril Buttay

Vertical GaN power devices counters the drawbacks of the lateral ones. The best performances are observed with vertical GaN-on-GaN, but the absence of large GaN substrates makes the homoepitaxy option less marketable than the heteroepitaxy one. However, thick heteroepitaxial GaN drift layers must…

ICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden. ⟨hal-05097968⟩