Publications

Affichage de 171 à 180 sur 16170


  • Communication dans un congrès

Phase-field simulations for RF switches: highlighting the benefits of GeTe over GST

Corentin Mercier, J.F. Robillard, Emmanuel Dubois, Olga Cueto, Bruno Reig, Stéphane Monfray, Alain Fleury

To better understand the crystallization mechanism of phase change material, the phase field method is used for the first time in simulations of the switching dynamics of RF switches. This method allows reproducing the nucleation and growth of the crystalline phase during amorphization and…

SISPAD - International Conference on Simulation of Semiconductor Processes and Devices, Sep 2025, Grenoble, France. ⟨hal-05291420⟩

  • Communication dans un congrès

Mechanical Design and Assembly of a Modular Educational Robot Using APIRO Components

Arthur Leduc, Odin de Vito, Noam Adda, Muhammad Fauzan Arief, Dwi Mulyo, Sofiane Ghenna, Hestiasari Rante

This paper presents a modular Cartesian robot for educational use, built using APIRO mechanical components and controlled via a browser-based interface hosted on an ESP32 microcontroller. The system enables students to explore mechanical assembly and axis control through hands-on interaction…

2025 International Electronics Symposium (IES), Aug 2025, Surabaya, Indonesia. pp.397-402, ⟨10.1109/IES67184.2025.11161804⟩. ⟨hal-05310569⟩

  • Communication dans un congrès

In-Situ Calibration with Silicon-Based Noise Diode for Enhanced Industrial RF Testing

Samuel Nguyen Dinh An, Cybelle Belem Goncalves, Victor Fiorese, Daniel Gloria, Federico Alimenti, Giacomo Schiavolini, Guillaume Ducournau, Joao Carlos Azevedo Goncalves

This paper presents a study on noise diode characterization and modeling in STMicroelectronics 55-nm Silicon-Germanium Bipolar Complementary Metal-Oxide-Semiconductor (SiGe BiCMOS) technology, aimed at enhancing calibration processes for on-wafer noise measurement in industrial testing. The…

2025 55th European Microwave Conference (EuMC), Sep 2025, Utrecht, Netherlands. pp.695-698, ⟨10.23919/EuMC65286.2025.11235243⟩. ⟨hal-05524909⟩

  • Communication dans un congrès

Effects of temperature, humidity and disorder in phase transformation phenomena of multi-stable systems

Vincenzo Fazio, Giuseppe Florio, Stefano Giordano, Giuseppe Puglisi, Nicola M Pugno

Multi-stable behavior at the microscopic length-scale is fundamental for phase trans- formation phenomena observed in many materials. These phenomena can be driven not only by external mechanical forces but are also crucially influenced by disorder and thermal fluctuations. Disorder, arising from…

Mathematical Models and Methods for Hierarchical Systems in Mechanics, Giuseppe Puglisi, Politecnico di Bari; Maria Grazia Naso, Università degli Studi di Brescia; Indam ( Istituto Nazionale di Alta Matematica "Francesco Severi"), Sep 2025, Cortona, Italie, France. ⟨hal-05300777⟩

  • Communication dans un congrès

Stochastic thermodynamics of holonomic systems

Stefano Giordano, Giuseppe Florio, Giuseppe Puglisi, Fabrizio Cleri, Ralf Blossey

<div><p>Stochastic thermodynamics is a recently developed framework designed to describe the behavior of small systems in contact with one or more thermal reservoirs. Originally applied to systems of unconstrained particles, it has provided deep insights into the thermodynamic behavior…

Mathematical Models and Methods for Hierarchical Systems in Mechanics, Giuseppe Puglisi, Politecnico di Bari; Maria Grazia Naso, Università degli Studi di Brescia; Indam (Istituto Nazionale di Alta Matematica "Francesco Severi"), Sep 2025, Cortona, Italie, Italy. ⟨hal-05300755⟩

  • Communication dans un congrès

First demonstration of vertical AlGaN P-i-N diodes grown on silicon substrate for Next-Generation power electronics

Jash Mehta, Abdelkhalek Sefssafi, Antoine Barbier, Stephanie Rennesson, Fabrice Semond, Julien Brault, F Medjdoub

In this work, we report the first demonstration of quasi-vertical AlGaN PiN diodes grown directly on silicon substrates, paving the way toward high-performance, low-cost power electronics. GaN and AlGaN heterostructures were grown on 2-inch silicon wafers via molecular beam epitaxy. The AlGaN diode…

8th International Workshop on Ultra-Wide Bandgap Materials and Devices IWUMD 2025, Sep 2025, Wrocław, Poland. ⟨hal-05345878⟩