Publications

• COMM

Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterization

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Adrien Bidaud, Mohammed El Amrani, Thibaud Guillemin, Maroun Dagher, Vishwajeet Maurya, Florian Bartoli, Eric Frayssinet, Farid Medjdoub, Julien Buckley, Yvon Cordier, Matthew Charles, Dominique Planson, Cyril Buttay

Vertical GaN power devices counters the drawbacks of the lateral ones. The best performances are observed with vertical GaN-on-GaN, but the absence of large GaN substrates makes the homoepitaxy option less marketable than the heteroepitaxy one. However, thick heteroepitaxial GaN drift layers must…

ICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden. ⟨hal-05097968⟩

• COMM

Thermal properties of nano-objects by means of scanning thermal microscopy

Antonin Massoud, Valeria Lacatena, Maciej Haras, Christian Mateo Frausto-Avila, Jose Manuel Sojo Gordillo, Gerard Gadea-Diez, Stéphane Monfray, Jean-Marie Bluet, J.F. Robillard, Victor Arellano-Arreola, Jose Martin Yañez Limon, Andres de Luna Bugallo, David Renahy, Marc Salleras, Carolina Duque Sierra, Pascal Vincent, Luisa Fonseca, Alex Morata, Albert Tarancón, Séverine Gomés, Pierre-Olivier Chapuis

FisMat 2025 biennial conference on condensed matter physics - Ultrafast Mechanical and Thermal Dynamics thematic workshop, Jul 2025, Venise, Italy. ⟨hal-05347651⟩

• HDR

Bridging Surface Science and van der Waals Engineering: Growth Mechanisms and Assembly of Functional Nanostructures

Nataliya Kalashnyk

This HDR memoir presents a concise overview of my research activity, from postgraduate studies to my current academic position, with a focus on nanoscience, surface science, and materials science. It begins with the scientific motivations behind the choice of these fields, followed by a summary of…

Physics [physics]. Université de Lille, 2025. ⟨tel-05137707⟩

• ART

Sputtered molybdenum nitride films for asymmetric micro-supercapacitors in aqueous electrolyte

Aiman Jrondi, Pardis Simon, Jérémie Chaillou, Lydia Karmazin, Antonella Iadecola, Isabelle Roch-Jeune, Herve Vezin, Wan-Yu Tsai, Pascal Roussel, Christophe Lethien

Here we investigated the electrochemical performance of molybdenum nitride films as an efficient electrode for asymmetric micro-supercapacitors. Molybdenum nitride films were successfully deposited and optimized by reactive magnetron sputtering. On the one hand, the tuning of several deposition…

Energy Storage Materials, 2025, 80, pp.104399. ⟨10.1016/j.ensm.2025.104399⟩. ⟨hal-05158241⟩

• COMM

On the Trustworthiness of Spiking Neural Networks and Neuromorphic Systems

Theofilos Spyrou, Haralampos-G Stratigopoulos, Ihsen Alouani, Said Hamdioui, Anteneh Gebregiorgis

<div><p>Neuromorphic computing offers a promising solution for realizing energy-efficient and compact Artificial Intelligence (AI) systems. Implemented with Spiking Neural Networks (SNNs), neuromorphic systems can benefit from SNN characteristics, such as event-driven computation, event…

2025 IEEE European Test Symposium (ETS), May 2025, Tallinn, Estonia. pp.1-10, ⟨10.1109/ETS63895.2025.11049613⟩. ⟨hal-05215055⟩

• COMM

Back Barrier Integration for &gt; 4kV Blocking in GaN HEMTs on Sapphire without Field Plates

Adrien Bidaud, Lyes Ben-Hammou, Etienne Okada, Katir Ziouche, F Medjdoub

<div><p>This work presents a significant advancement in optimizing the trade-off between on-resistance and breakdown voltage in GaN high electron mobility transistors (HEMTs) grown on sapphire substrates. By integrating an AlGaN back barrier and employing high carbon doping in the…

SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2025), Jul 2025, Toulouse, France. ⟨hal-05346045⟩

• COMM

AlGaN channel high electron mobility transistors on Si for power electronics

Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Julien Pernot, Maud Nemoz, Sebastian Tamariz, Stéphanie Rennesson, Fabrice Semond, Yvon Cordier, Farid Medjdoub, Philippe Ferrandis

Symposium de Génie Électrique SGE 2025, CNRS, Jul 2025, Toulouse, France. ⟨hal-05398228⟩

• COMM

Unusual optoelectronic and topological properties of HgTe QDs

Antoine Hage, Christophe Delerue

Summer School on Nanocharacterization, Maxime Berthe; Kamel Haddadi, Jul 2025, Villeneuve d'Ascq, France. ⟨hal-05171445⟩

• ART

Terahertz Frequency Comb High-Resolution Heterodyne Spectrometer

Francis Hindle, Alexandra Khabbaz, Anthony Roucou, Jean-Francois Lampin, Gaël Mouret

We demonstrate the advantages of THz frequency combs for high-resolution spectroscopy. This benefits from wide spectral coverage and the exact knowledge of the frequency position of each comb component. Heterodyne detection combined with a fast Fourier spectrometer enables rapid and simultaneous…

IEEE Transactions on Terahertz Science and Technology, 2025, 15 (4), ⟨10.1109/TTHZ.2025.3572249⟩. ⟨hal-04811272v2⟩

• ART

Integrated proteomics and metabolomics to evaluate the combined effect of propyl gallate and fumonisin B1 on colon inflammation in vitro and in vivo

Xiangrong Chen, Chenxin Dongye, Yan Li, Yanfang Zhao, Rabah Boukherroub, Huijuan Li, Tianliang Li, Xiangfeng Chen

Ecotoxicology and Environmental Safety, 2025, 300, pp.118440. ⟨10.1016/j.ecoenv.2025.118440⟩. ⟨hal-05123223⟩