Publications

Affichage de 3121 à 3130 sur 16170


  • Chapitre d'ouvrage

8 - General wave perspectives

L. Dobrzynski, Housni Al Wahsh, Abdellatif Akjouj, El Houssaine El Boudouti

Many other waves may be investigated with a second order differential equation, function of time and space position, similar to that of Maxwell used in this Photonics book. In many cases, these equations differ one from another only by some coefficients. Without trying to be exhaustive, a few other…

Photonics, Part one: photonic paths, Elsevier, pp.147-151, 2021, 978-0-12-819388-4. ⟨10.1016/B978-0-12-819388-4.00017-4⟩. ⟨hal-03357577⟩

  • Article dans une revue

High-Q silicon nitride drum resonators strongly coupled to gates

Xin Zhou, Srisaran Venkatachalam, Ronghua Zhou, Hao Xu, Alok Pokharel, Andrew Fefferman, Mohammed Zaknoune, Eddy Collin

Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration…

Nano Letters, 2021, 21 (13), pp.5738-5744. ⟨10.1021/acs.nanolett.1c01477⟩. ⟨hal-03263144⟩

  • Communication dans un congrès

Temperature Sensitivity of Surface Phononic Crystals modes (SPnC) based on Ni Pillars array deposited on LiNBO3

Abdelkrim Talbi, Ghizlane Boussatour, Aurelien Mazzamurro, Cécile Ghouila-Houri, Olivier Boumatar, Philippe Pernod

This work focuses on the theoretical and experimental investigation of acoustic waves sensors based on 2D Surface Phononic Crystals (PnC). We investigated the temperature coefficient of frequency (TCF) for surface localized modes in 2D PnCs composed of Ni pillars deposited on Y-cut LiNBO3 substrate…

2021 Symposium on Design, Test, Integration and Packaging of MEMS and MOEMS, DTIP 2021, Aug 2021, Paris, France. pp.1-3, ⟨10.1109/DTIP54218.2021.9568671⟩. ⟨hal-03541057⟩

  • Communication dans un congrès

An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT

F. Albany, A. Curutchet, N. Labat, F. Lecourt, E. Walasiak, H. Maher, Y. Cordier, N. Defrance, N. Malbert

The semi-on-state reliability of normally-off AlGaN/GaN high electron mobility transistor fabricated by fluorine ion plasma implantation technology is reported, focusing on an advanced dc step-stress methodology. By inserting a non-stressful fixed-bias step between each stress step, a reliable in-…

15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 237-240, https://ieeexplore.ieee.org/abstract/document/9337362. ⟨hal-03362260⟩

  • Communication dans un congrès

Bias-dependence of surface charge at low temperature in GaN self-switching diodes

E. Perez-Martin, I. Iniguez-De-La-Torre, T. Gonzalez, Christophe Gaquière, J. Mateos

In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence…

13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Sevilla, Spain. pp.90-93, ⟨10.1109/CDE52135.2021.9455737⟩. ⟨hal-03362256⟩