Publications

Affichage de 3161 à 3170 sur 16170


  • Communication dans un congrès

Design of a solid-fluid acoustic sensor based on Fano resonances

I. Quotane, M. Amrani, Cécile Ghouila-Houri, E.H. El Boudouti, L. Krutyanskiy, Bogdan Piwakowski, Philippe Pernod, Abdelkrim Talbi, Bahram Djafari-Rouhani

The achievement of an efficient acoustic biosensor based on one dimensional solid-liquid phononic crystals supporting bound states in the continuum (BICs) and Fano resonances is reported herein. The structure used in this work is made of solid-liquid-solid triple layer embedded in water. The main…

2021 Symposium on Design, Test, Integration and Packaging of MEMS and MOEMS, DTIP 2021, Aug 2021, Paris, France. ⟨10.1109/DTIP54218.2021.9568664⟩. ⟨hal-03508194⟩

  • Communication dans un congrès

An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT

F. Albany, A. Curutchet, N. Labat, F. Lecourt, E. Walasiak, H. Maher, Y. Cordier, N. Defrance, N. Malbert

The semi-on-state reliability of normally-off AlGaN/GaN high electron mobility transistor fabricated by fluorine ion plasma implantation technology is reported, focusing on an advanced dc step-stress methodology. By inserting a non-stressful fixed-bias step between each stress step, a reliable in-…

15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 237-240, https://ieeexplore.ieee.org/abstract/document/9337362. ⟨hal-03362260⟩

  • Article dans une revue

GaN-based power devices: Physics, reliability, and perspectives

Matteo Meneghini, Carlo de Santi, Idriss Abid, Matteo Buffolo, Marcello Cioni, Riyaz Abdul Khadar, Luca Nela, Nicolò Zagni, Alessandro Chini, F Medjdoub, Gaudenzio Meneghesso, Giovanni Verzellesi, Enrico Zanoni, Elison Matioli

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity…

Journal of Applied Physics, 2021, 130 (18), pp.181101. ⟨10.1063/5.0061354⟩. ⟨hal-03421528⟩

  • Chapitre d'ouvrage

3 - Path states

L. Dobrzynski, Housni Al Wahsh, Abdellatif Akjouj, El Houssaine El Boudouti, Bahram Djafari-Rouhani, Cécile Ghouila-Houri, Abdelkrim Talbi, Gaëtan Lévêque

Any open and closed loop eigenfunction has zero motion space points, called here robust zeros. Any such zero is robust because its eigenstate cannot be activated by any action applied on it. Indeed, such zero space positions remain unaffected when the loop is interfaced with its outside world only…

Photonics, Part one : photonic paths, Elsevier, pp.21-31, 2021, 978-0-12-819388-4. ⟨10.1016/B978-0-12-819388-4.00012-5⟩. ⟨hal-03350804⟩

  • Chapitre d'ouvrage

1 - Open loop

L. Dobrzynski, Housni Al Wahsh, Abdellatif Akjouj, El Houssaine El Boudouti, Cécile Ghouila-Houri, Abdelkrim Talbi, Gaëtan Lévêque, Bahram Djafari-Rouhani, Yan Pennec, Yabin Jin

Networks can be constructed out of finite open loops. Open loops are guides such that their one-dimensional properties may be considered independent of the open loop shape and radius. Their response function is derived from that of infinite open loops. A general definition of eigenstates is also…

Photonics, Part one: photonic paths, Elsevier, pp.3-13, 2021, 978-0-12-819388-4. ⟨10.1016/B978-0-12-819388-4.00010-1⟩. ⟨hal-03350729⟩

  • Communication dans un congrès

Bias-dependence of surface charge at low temperature in GaN self-switching diodes

E. Perez-Martin, I. Iniguez-De-La-Torre, T. Gonzalez, Christophe Gaquière, J. Mateos

In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence…

13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Sevilla, Spain. pp.90-93, ⟨10.1109/CDE52135.2021.9455737⟩. ⟨hal-03362256⟩