Publications

Affichage de 3381 à 3390 sur 16059


  • COUV

GaN-based HEMTs for mm-wave applications

Kathia Harrouche, F Medjdoub

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices, 2020, ISBN 978-3-527-34710-0 ; e-ISBN 978-3-527-82525-7. ⟨hal-03287288⟩

  • COMM

High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz

Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub

We report on breakthrough power-added-efficiency (PAE) Q-band performances using a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performance and robustness for the thinner barrier layer attributed to the reduced mechanical…

IEEE/MTT-S International Microwave Symposium (IMS 2020), Aug 2020, Los Angeles, CA, United States. Session Tu3H - Advances in Microwave Semiconductor Devices, paper Tu3H-2, 285-288, ⟨10.1109/IMS30576.2020.9223971⟩. ⟨hal-03043653⟩

  • COMM

Evaluation of micro laser sintering metal 3D-printing technology for the development of waveguide passive devices up to 325 GHz

Victor Fiorese, Cybelle Belem-Gonçalves, Carlos del Rio, Diane Titz, Frédéric Gianesello, Cyril Luxey, Guillaume Ducournau, Emmanuel Dubois, Christophe Gaquière, Daniel Gloria

In this paper, we propose an assessment up to 325 GHz of Micro Laser Sintering (MLS) metal 3D-Printing technology in order to achieve lightweight and cost-effective millimeter wave (mmW) passive function. We first designed and manufactured a bended WR5 waveguide in order to assess achievable…

IEEE/MTT-S International Microwave Symposium, IMS 2020, Aug 2020, Los Angeles, United States. pp.1168-1171, ⟨10.1109/IMS30576.2020.9224102⟩. ⟨hal-03091222⟩

  • COMM

Analysis of Si and GaN GAA-NW-FETs in High-k Gate Oxides for Next Generation Mobile Systems

Ygor Fonseca, Rafael Nobrega, Ulysses Duarte, Thiago Raddo, Andy Triwinarko, Iyad Dayoub, Anderson Sanches, Murilo Loiola

Next-generation mobile systems will eventually be based on a vast range of innovative devices and components. Some of these devices, either electronic or optical, will play a key role in the system to support growing data traffic demand. In this paper, an analysis of silicon (Si) and gallium…

12th International Symposium on Communication Systems, Networks and Digital Signal Processing (CSNDSP 2020), Jul 2020, Porto, Portugal. pp.1-5, ⟨10.1109/CSNDSP49049.2020.9249531⟩. ⟨hal-03382857⟩

  • ART

2-D Modeling of Rosen-Type Piezoelectric Transformer by Means of a Polynomial Approach

Derandraibe Jeannot Falimiaramanana, Faniry Emilson Ratolojanahary, Jean-Etienne Lefebvre, Lahoucine El Maimouni, Mohamed Rguiti

A 2-D semianalytical model using the Legendre polynomial approach was applied for modeling the piezoelectric transformer (PT). In the model, the mechanical displacements and the electric potential were expanded in a double series of orthonormal polynomials with an appropriate analytical form.…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2020, 67 (8), pp.1701-1714. ⟨10.1109/TUFFC.2020.2975647⟩. ⟨hal-03480267⟩