Publications

• ART

High Q THz photonic crystal cavity on a low loss suspended Silicon platform

Elias Akiki, Marc Faucher, Mathias Vanwolleghem, Mattias Verstuyft, Bart Kuyken, Benjamin Walter, Jean-Francois Lampin, Guillaume Ducournau

In this work, we present an ultra-high Q cavity at Terahertz (THz) frequencies. The designed cavity is built on a low loss suspended silicon (Si) waveguide. The substrate removal under the waveguide and the use of optimized deep reactive ion etching processing is the main reason for observing very…

IEEE Transactions on Terahertz Science and Technology, 2020, pp.1-1. ⟨10.1109/TTHZ.2020.3019928⟩. ⟨hal-03065163⟩

• UNDEFINED

Cell selective manipulation with single beam acoustical tweezers.

Michael Baudoin, Jean-Louis Thomas, Roudy Al Sahely, Jean-Claude Gerbedoen, Zhixiong Gong, Aude Sivery, Olivier Bou Matar, Nikolay Smagin, Peter Favreau, Alexis Vlandas

Acoustical tweezers open major prospects in microbiology for cells and microorganisms contact- less manipulation, organization and mechanical properties testing since they are biocompatible, label-free and can exert forces several orders of magnitude larger than their optical counterpart at…

2020. ⟨hal-02433142v2⟩

• ART

Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies, Activité électrique de l'interface AlN/Si: identification de l'origine principale des pertes de propagation en hyperfréquences dans les composants GaN sur Silicium

Micka Bah, Damien Valente, Marie Lesecq, N. Defrance, Maxime Garcia Barros, Jean-Claude de Jaeger, Eric Frayssinet, Rémi Comyn, Thi Huong Ngo, Daniel Alquier, Yvon Cordier

AlN nucleation layers are the basement of GaN-on-Si structures grown for light-emitting diodes, high frequency telecommunication and power switching systems. In this context, our work aims to understand the origin of propagation losses in GaN-on-Si High Electron Mobility Transistors at microwaves…

Scientific Reports, 2020, 10 (1), pp.14166. ⟨10.1038/s41598-020-71064-0⟩. ⟨hal-02929022⟩

• ART

Spatially selective manipulation of cells with single-beam acoustical tweezers

Michael Baudoin, Jean-Louis Thomas, Roudy Al Sahely, Jean Claude Gerbedoen, Zhixiong Gong, Aude Sivery, Olivier Bou Matar, Nikolay Smagin, Peter Favreau, Alexis Vlandas

Acoustical tweezers open major prospects in microbiology for cells and microorganisms contactless manipulation, organization and mechanical properties testing since they are biocompatible, label-free and have the potential to exert forces several orders of magnitude larger than their optical…

Nature Communications, 2020, 11, pp.4244. ⟨10.1038/s41467-020-18000-y⟩. ⟨hal-03003284⟩

• COMM

Structure and electronic properties of pseudocapacitive vanadium nitride films

Maya Marinova, Marielle Huvé, Kevin Robert, Christophe Lethien, David Troadec, Pascal Roussel

The European Microscopy Congress 2020 (EMC2020), Aug 2020, Copenhagen, Denmark. ⟨hal-03584044⟩

• COMM

[Invited] Assessing electron transport through 2D molecule-nanoparticle networks for reservoir computing sensing (Invited)

Dominique Vuillaume

SPIE Organic Photonics & Electronics, Aug 2020, San Diego, United States. ⟨hal-03253727⟩

• ART

Thermal resistance of an interfacial molecular layer by first-principles molecular dynamics

Thuy-Quynh Duong, Carlo Massobrio, Guido Ori, Mauro Boero, Évelyne Martin

The approach-to-equilibrium molecular dynamics (AEMD) methodology is applied in combination with first-principles molecular dynamics (FPMD) to investigate the thermal transfer between two silicon blocks connected by a molecular layer. Our configuration consists of alkanes molecules strongly coupled…

The Journal of Chemical Physics, 2020, 153 (7), pp.074704. ⟨10.1063/5.0014232⟩. ⟨hal-02990565⟩

• ART

Low-temperature-grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation

Charbel Tannoury, Maximilien Billet, Christophe Coinon, Jean-Francois Lampin, Emilien Peytavit

The authors show in this Letter that photoconductors based on GaAs grown at low temperatures can exhibit photoresponses as high as 25 mA/W under continuous-wave 1550-nm-wavelength illumination. It is achieved by using an optical Fabry-Pérot cavity in order to improve the external quantum efficiency…

Electronics Letters, 2020, 56, pp.897-899. ⟨10.1049/el.2020.1116⟩. ⟨hal-02997766⟩

• COMM

Investigation of Temperature, Well Width and Composition Effects on the Intersubband Absorption of InGaAs/GaAs Quantum Wells

Lynda Chenini, Abdelkader Aissat, Sofiane Ammi, Jean-Pierre Vilcot

Optical properties of the ternary InxGa1-xAs/GaAs alloys including strain, band gap energy, band offsets, and intersubband absorption coefficient in the conduction band (CB) are theoretically investigated. Effect of temperature, T, and Indium composition, In, of InGaAs on all these parameters is…

2nd International Conference on Electronic Engineering and Renewable Energy Systems, Apr 2020, Saidia, Morocco. pp.325-332, ⟨10.1007/978-981-15-6259-4_34⟩. ⟨hal-03043560⟩

• COMM

Simulation and Optimization of Cds/ZnSnN2 Structure for Solar Cell Applications with SCAPS-1D Software

Abdelmoumene Laidouci, Abdelkader Aissat, Jean-Pierre Vilcot

In this paper, we are interested in simulating and modeling of Cds/ZnSnN2 structure for a solar cell using SCAPS-1D. The ZnSnN2 is considered as one of the promising absorber materials for photovoltaic application due to the high optical efficiency and the low cost. In the present work, we have…

2nd International Conference on Electronic Engineering and Renewable Energy Systems, ICEERE 2020, Apr 2020, Saidia, Morocco. pp.211-222, ⟨10.1007/978-981-15-6259-4_21⟩. ⟨hal-03043563⟩