Rostyslav Bilyy, Solomiya Paryzhak, Kostiantyn Turcheniuk, Tetiana Dumych, Alexandre Barras, Rabah Boukherroub, Fujia Wang, Gleb Yushin, Sabine Szunerits

Materials Today, 2019, 22 (58-66), ⟨10.1016/j.mattod.2018.10.034⟩. ⟨hal-01944313⟩

Article dans une revue

3D Patterning of Si by Contact Etching With Nanoporous Metals

Stéphane Bastide, Encarnacion Torralba, Mathieu Halbwax, Sylvain Le Gall, Elias Mpogui, Christine Cachet-Vivier, Vincent Magnin, Joseph Harari, Dmitri Yarekha, Jean-Pierre Vilcot

Nanoporous gold and platinum electrodes are used to pattern n-type silicon by contact etching at the macroscopic scale. This type of electrode has the advantage of forming nanocontacts between silicon, the metal and the electrolyte as in classical metal assisted chemical etching while ensuring…

Frontiers in Chemistry, 2019, 7, pp.256. ⟨10.3389/fchem.2019.00256⟩. ⟨hal-02409484⟩

Article dans une revue

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14…

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩

Article dans une revue

Fusion of transformed shallow features for facial expression recognition

Fares Bougourzi, Karim Mokrani, Yassine Ruichek, Fadi Dornaika, Abdelkrim Ouafi, Abdelmalik Taleb-Ahmed

Facial expression conveys important signs about the human affective state, cognitive activity, intention and personality. In fact, the automatic facial expression recognition systems are getting more interest year after year due to its wide range of applications in several interesting fields such…

IET Image Processing, 2019, 13 (9), pp.1479-1489. ⟨10.1049/iet-ipr.2018.6235⟩. ⟨hal-03138559⟩

Communication dans un congrès

Energy-efficient techniques for combating the influence of reactive jamming using Non-Orthogonal Multiple Access and Distributed Antenna Systems

Joumana Farah, Jacques Akiki, Eric Pierre Simon

The aim of this work is to propose new approaches for maximizing the energy efficiency of downlink 5G mobile communication systems, in the presence of a reactive jammer. The concepts of non-orthogonal multiple access (NOMA) and distributed antenna systems (DAS) are exploited to devise joint subband…

Wireless Telecommunications Symposium (WTS 2019), Apr 2019, New York, NY, United States. ⟨10.48550/arXiv.1903.11574⟩. ⟨hal-04542881⟩

Communication dans un congrès

Enlarging the Frontiers of Research in the IR/mm Range Using Synchrotron Radiation

J-B. Brubach, B. Langerome, M. Verseils, F. Capitani, T. Souske, Jean-Francois Lampin, S. Eliet, O. Pirali, M. A. Martin-Drumel, Francis Hindle, Gaël Mouret, C. Evain, C Szwaj, E. Roussel, S. Bielawski, T. Timusk, Pascale Roy

Optical probes are among the most important techniques for characterizing new physical states induced by changes of temperature and/or pressure. In link with its high brightness and wide spectral coverage, infrared synchrotron radiation is ideally suited for such studies when the quantity of…

44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-2, ⟨10.1109/IRMMW-THz.2019.8873937⟩. ⟨hal-04295283⟩

Article dans une revue

Y-shaped magnonic demultiplexer using induced transparency resonances

Abdelkader Mouadili, El Houssaine El Boudouti, Abdellatif Akjouj, Housni Al-Wahsh, Bahram Djafari-Rouhani, L. Dobrzynski

We give an analytical demonstration of the possibility to realize a simple magnonic demultiplexer based on induced transparency resonances. The demultiplexer consists on an Y-shaped waveguide with an input line and two output lines. Each line contains two grafted stubs at a given position far from…

AIP Advances, 2019, 9 (3), pp.035011. ⟨10.1063/1.5080350⟩. ⟨hal-03143601⟩

Article dans une revue

High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation

Moujahed Gassoumi, Abdelhamid Helali, Malek Gassoumi, Christophe Gaquière, Hassen Maaref

AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment is used to…

Silicon, 2019, 11 (1), pp.557-562. ⟨10.1007/s12633-018-9767-6⟩. ⟨hal-03148960⟩