Publications

• Poster de conférence

Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Ezgi Dogmus, Malek Zegaoui, F Medjdoub, Cédric Lacam, Piero Gamarra, Hichem Ben-Ammar, Marie-Pierre Chauvat, Magali Noelle Valerie Morales, Pierre Ruterana

Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs . EMRS Fall Meeting, Sep 2016, Varsovie, Poland. ⟨hal-01641574⟩

• Communication dans un congrès

Controlled elaboration of high aspect ratio cone-shape pore arrays in silicon by metal assisted chemical etching

Stéphane Bastide, Encarnacion Torralba-Penalver, Christine Cachet-Vivier, Sylvain Le Gall, Raphaël Lachaume, Mathieu Halbwax, Vincent Magnin, Joseph Harari, Jean-Pierre Vilcot

Metal Assisted Chemical Etching (MACE) of Si has attracted the attention of academy and industry during the last decades as an efficient low-cost wet etching method to produce Si nanostructures with high aspect ratios (HAR). Several noble metals are known to be effective catalysts for MACE: Ag…

E-MRS fall meeting 2016, Materials Research Society, Sep 2016, Varsovie, Poland. ⟨hal-01579541⟩

• Communication dans un congrès

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Hadhemi Lakhdhar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert

ESREF 2016, Sep 2016, Händel-Halle, Germany. ⟨hal-02462684⟩

• Communication dans un congrès

Electrical Bragg band gaps in piezoelectric plates with a periodic array of electrodes

Clement Vasseur, Charles Croënne, Jerome O. Vasseur, Bertrand Dubus, Anne-Christine Hladky, Mai Pham Thi

This paper concerns a piezoelectric bar or plate, poled along its thickness, that supports on its top and bottom surfaces a periodic grating of electrodes. An analytical model is developed considering wave propagation along the length of the plate/bar. It shows that an electrical Bragg band gap can…

2016 IEEE International Ultrasonics Symposium (IUS), Sep 2016, Tours, France. paper P3-C2-7, 4 p., ⟨10.1109/ULTSYM.2016.7728624⟩. ⟨hal-03299395⟩

• Poster de conférence

Time-domain modeling of non-contact surface wave NDT system and its experimental validation

Ji Li, Bogdan Piwakowski, L. Li

Proceedings of 2016 IEEE International Ultrasonics Symposium, IUS 2016, Sep 2016, Tours, France. ⟨hal-03587028⟩

• Article dans une revue

Event detection in sensor networks with non-linear amplifiers via mixture series expansion

Pengfei Zhang, Ido Nevat, Gareth W. Peters, Laurent Clavier

We develop a new algorithm for binary event detection in wireless sensor networks where the sensing process exhibits non-linear behavior causing clipping of the signals at random. We formulate the optimal event detection as a likelihood ratio test under a mixture model, which results in intractable…

IEEE Sensors Journal, 2016, 16 (18), pp.6939-6946. ⟨10.1109/JSEN.2016.2592103⟩. ⟨hal-03270111⟩

• Communication dans un congrès

Measurement and analysis of arc tracking characteristics in the high frequency band

Virginie Degardin, L. Koné, Pierre Laly, M. Lienard, Pierre Degauque, F. Valensi

High voltage direct current networks are now being implemented in the new generation of civil aircrafts. If a short circuit occurs between wires of the power cable, an “arc tracking” may happen. Such an arc can sustain over a time which can reach one second or more and propagate along the cable.…

2016 IEEE AUTOTESTCON, Sep 2016, Anaheim, United States. pp.Session 2D1 - Prognostics and Health Monitoring 1, 153-158, ⟨10.1109/AUTEST.2016.7589591⟩. ⟨hal-03514491⟩

• Communication dans un congrès

Physics-based electrical compact model for monolayer Graphene FETs

Jorge Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy

Solid-State Device Research Conference (ESSDERC), 2016 46th European, Sep 2016, Lausanne, Switzerland. ⟨10.1109/ESSDERC.2016.7599630⟩. ⟨hal-01399868⟩

• Communication dans un congrès

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD

G. Mugny, F.G. Pereira, D. Rideau, F. Triozon, Y.M. Niquet, M. Pala, D. Garetto, C. Delerue

Drain current in Ultra-Thin Body (UTBB) Fully-Depleted Silicon-On-Insulator (FDSOI) device is investigated using Non-Equilibrium Green Function (NEGF) simulations. The effects of phonons (PH) and surface roughness (SR) on saturation velocity are studied. We analyze the current and extract…

2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.424-427, ⟨10.1109/ESSDERC.2016.7599676⟩. ⟨hal-02065220⟩

• Communication dans un congrès

Band structure of 2D nanomaterials

Christophe Delerue, Athmane Tadjine, Guy Allan

International Conference on Solution-based Two-dimensional Nanomaterials, Sol2D16, Sep 2016, Berlin, Germany. ⟨hal-03317603⟩