Publications

Affichage de 7001 à 7010 sur 16170


  • Communication dans un congrès

Hyperspectral analysis of ultrafast hot carrier dynamics in Pb-chalcogenide nanocrystals : a case for slow cooling

Pieter Geiregat, Arjan Houtepen, Michiel Aerts, Christophe Delerue, Zeger Hens, Dries van Thourhout

8th International Conference on Quantum Dots, QD 2014, 2014, Pisa, Italy. ⟨hal-01015211⟩

  • Communication dans un congrès

Optical properties of HgTe nanocrystals

Guy Allan, Christophe Delerue, Ali Al-Otaify, David J. Binks, Stephen V. Kershaw, Shuchi Gupta, Andrey L. Rogach

HgTe nanocrystals presently receive growing interest because the negative band gap in bulk HgTe enables tunability of the gap from the infrared to the near infrared in quantum dots thanks to the quantum confinement. Therefore we propose a tight-binding model of HgTe which gives an accurate band…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France. ⟨hal-01015327⟩

  • Communication dans un congrès

Design and radiation hardness of next generation solar UV radiometers

Samuel Gissot, Ali Benmoussa, Boris Giordanengo, Ali Soltani, Terubumi Saito, Udo Schühle, Udo Kroth, Alexander Gottwald

For next space-based ultraviolet (UV) solar radiometers, we propose a design based on subsystem components that are selected according to lessons learned from previous flying missions and ground irradiation campaigns. UV interference filters inherited from space-based solar missions show strong…

IEEE Nuclear and Space Radiation Effects Conference, NSREC 2014, 2014, Paris, France. paper W-24, 6 p. ⟨hal-01063876⟩

  • Communication dans un congrès

InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

L. Desplanque, Xianglei Han, Maria Fahed, Vinay K. Chinni, David Troadec, M.-P. Chauvat, Pierre Ruterana, Xavier Wallart

We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. paper Mo-C1-6, 2 p., ⟨10.1109/ICIPRM.2014.6880530⟩. ⟨hal-01059835⟩

  • Communication dans un congrès

Robust receiver in impulsive noise

Xin Yan, Laurent Clavier, Ido Nevat, Gareth W. Peters, François Septier

Impulsive interference is a strong limitation in ultra wide band systems or ad hoc networks. Using stochastic geometry without considering a guard zone around the receiver leads to an alpha-stable distribution for this interference. Based on this assumption, it is possible to design efficient…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01020280⟩

  • Communication dans un congrès

Atomic switch : synaptic functionalities and integration strategies

Selina La Barbera, David Guérin, Dominique Vuillaume, F. Alibart

Nowadays, neuro-inspired computing has generated a lot of interest and seems to be a promising candidate to complement and to provide enhanced performances and new functionalities to the existing CMOS/Von Neumann processor. Engineering of memristive nano devices with specific functionalities for…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01020271⟩

  • Proceedings/Recueil des communications

Historical Reflections on Newton’s First Law and Carnot’s Première Hypothèse

Raffaele Pisano

Proceedings of 5th ESHS Conference European Society for the History of Science, National Hellenic Research Foundation/Institute of Historical Research, pp.214-220, 2014, 978-960-98199-3-0. ⟨hal-04517940⟩