Publications

• Article dans une revue

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

J.F. Millithaler, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonz Alez, P. Sangaré, Guillaume Ducournau, Christophe Gaquière, J. Mateos

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode.…

Applied Physics Letters, 2014, 104, 073509, 4 p. ⟨10.1063/1.4866166⟩. ⟨hal-00951554⟩

• Communication dans un congrès

Silicon pillars as resonators in an acoustical metamaterial

B. Bonello, R. Marchal, R. Moiseyenko, Yan Pennec, Bahram Djafari-Rouhani, J. Zhao, O. Boyko

We have investigated the propagation of Lamb waves in structures made of either an isolated resonant pillar or a set of pillars arranged in a line on a thin plate. The resonators as well as the plate are made of silicon. FEM computations show that two bending modes and one compressional mode are…

ASME 2014 International Mechanical Engineering Congress and Exposition, IMECE 2014, Nov 2014, Montreal, Canada. ⟨10.1115/IMECE2014-37914⟩. ⟨hal-03508193⟩

• Article dans une revue

On the effect of δ-doping in self-switching diodes

Andreas Westlund, Ignacio Iñiguez-De-La-Torre, Per-Åke Nilsson, Tomas González, Javier Mateos, Paul Sangaré, Guillaume Ducournau, Christophe Gaquière, L. Desplanque, Xavier Wallart, Jan Grahn

Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design…

Applied Physics Letters, 2014, 105 (9), 093505, 5 p. ⟨10.1063/1.4894806⟩. ⟨hal-01061584⟩

• Communication dans un congrès

A real-time terahertz beam monitoring application with a 1024-pixel CMOS terahertz camera module

Richard Al Hadi, Jean-Francois Lampin, Ullrich Pfeiffer

In this paper a terahertz beam monitoring application of an optically pumped molecular terahertz laser with a 1024-pixel CMOS terahertz camera is presented. The terahertz camera has been used to detect variations in real-time of the terahertz source beam around 2.52 THz.

Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. ⟨hal-00975794⟩

• Article dans une revue

Confinement-modulated junctionless nanowire transistors for logic circuits

François Vaurette, Renaud Leturcq, Sylvie Lepilliet, Bruno Grandidier, Didier Stiévenard

We report the controlled formation of nanoscale constrictions in junctionless nanowire field-effect transistors that efficiently modulate the flow of the current in the nanowire. The constrictions act as potential barriers and the height of the barriers can be selectively tuned by gates, making the…

Nanoscale, 2014, 6 (22), pp.13446-13450. ⟨10.1039/c4nr04047c⟩. ⟨hal-04614113⟩

• Article dans une revue

On the Jesuit Edition of Newton’s Principia. Science and Advanced Researches in the Western Civilization

Paolo Bussotti, Raffaele Pisano

Advances in Historical Studies, 2014, 03 (01), pp.33-55. ⟨10.4236/ahs.2014.31005⟩. ⟨hal-04507865⟩

• Communication dans un congrès

Current-voltage characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes

H. Mosbahi, M. Charfeddine, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

The AlGaN/GaN high electron mobility transistors (HEMTs) is a promising candidate for microwave applications due to its high power and high temperature. owing to their large and direct band gap, as well as favorable transport properties. Moreover, III-V nitrides could be suitable for the emitters…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961393⟩

• Article dans une revue

Electrical properties of lead-free KNN films on SRO/STO by RF magnetron sputtering

T. Li, G.S. Wang, K. Li, G. Du, Y. Chen, Z.Y. Zhou, Denis Remiens, X.L. Dong

Ceramics International, 2014, 40, pp.1195-1198. ⟨10.1016/j.ceramint.2013.07.005⟩. ⟨hal-00903762⟩

• Communication dans un congrès

Approach-to-equilibrium molecular dynamics for thermal conductivies and boundary conductances

Pier Luca Palla, Evelyne Lampin, Pierre-Arnaud Francioso, Fabrizio Cleri

Thermal transport is simulated at the atomic scale by approach-to-equilibrium molecular dynamics simulations (AEMD) [1]. In this method, a hot and a cold regions are delimited, before the approach-to-equilibrium is simulated by releasing the thermal constraint. The temperature difference between…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00966169⟩

• Communication dans un congrès

[Invited] MEMS research, applications and results

S. Arscott

Workshop on Nanoscale Processing for MEMS and NEMS, 2014, Villeneuve d'Ascq, France. ⟨hal-00976620⟩