Publications

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly…

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩

• Article dans une revue

A 60 GHz transceiver for low power ad hoc networks

Christophe Loyez, Michael Bocquet, N. Rolland

This article presents a low-power consumption architecture of RF transceiver using impulse radio signals operating at 60 GHz. Both intrinsic features and related technologies of this operating frequency are detailed and the specific topology of this communication and geolocalization system is…

Microwave and Optical Technology Letters, 2013, 55, pp.2640-2643. ⟨10.1002/mop.27913⟩. ⟨hal-00871900⟩

• Article dans une revue

Pattern classification by memristive crossbar circuits using ex situ and in situ training

F. Alibart, E. Zamanidoost, D.B. Strukov

Nature Communications, 2013, 4, pp.2072-1-7. ⟨10.1038/ncomms3072⟩. ⟨hal-00871928⟩

• Communication dans un congrès

Développement de capteurs à ondes de surface HF, bas coûts, sur substrat piézoélectrique de type PZT pour le contrôle de structures

Marc Duquennoy, Christian Courtois, Olivier Rigo, Stéphane Hocquet, Mohamed Rguiti, Mohammadi Ouaftouh, Julien Deboucq, Gregory Martic, Laurent Seronveaux, Frédéric Jenot, Véronique Lardot, Daniel Monnoye, Francis Cambier

6ème Colloque Interdisciplinaire en Instrumentation, C2I 2013, 2013, Lyon, France. pp.15-25. ⟨hal-00955221⟩

• Article dans une revue

Metallic nanoparticles enhanced the spontaneous emission of semiconductor nanocrystals embedded in nanoimprinted photonic crystals

V. Reboud, Gaëtan Lévêque, M. Striccoli, T. Placido, A. Panniello, M.L. Curri, J. A. Alducin, T. Kehoe, N. Kehagias, D. Mecerreyes, S. Newcomb, D. Iacopino, G. Redmond, C.M. Sotomayor Torres

Nanoscale, 2013, 5, pp.239-245. ⟨10.1039/C2NR32134C⟩. ⟨hal-00796414⟩

• Article dans une revue

Recent advances in the development of graphene-based surface plasmon resonance (SPR) interfaces

Sabine Szunerits, N. Maalouli, E. Wijaya, Jean-Pierre Vilcot, Rabah Boukherroub

Analytical and Bioanalytical Chemistry, 2013, 405, pp.1435-1443. ⟨10.1007/s00216-012-6624-0⟩. ⟨hal-00796418⟩

• Communication dans un congrès

Interactions optomécaniques dans les cavités phoxoniques

Said El-Jallal, Mourad Oudich, Yan Pennec, Bahram Djafari-Rouhani, Abdelkader Makhoute

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957779⟩

• Communication dans un congrès

Radio frequency and low noise characteristics of SOI technology on plastic for flexible electronics

A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, D. Gloria, C. Raynaud

8th European Workshop on Silicon on Insulator Technology, Devices and Circuits, EuroSOI 2012, 2012, Montpellier, France. pp.73-78, ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00797713⟩

• Article dans une revue

Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Christophe Krzeminski

Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the…

Journal of Applied Physics, 2013, 114, 224501, 9 p. ⟨10.1063/1.4839675⟩. ⟨hal-00917560⟩

• Article dans une revue

Doped semiconductor nanocrystal junctions

Lukasz Borowik, Thuat Nguyen-Tran, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that…

Journal of Applied Physics, 2013, 114, 204305, 5 p. ⟨10.1063/1.4834516⟩. ⟨hal-00941624⟩