Publications

• Article dans une revue

Six-port-based compact and low-cost near-field 35 GHz microscopy platform for non-destructive evaluation

Kamel Haddadi, T. Lasri

NDT & E International, 2013, 55, pp.102-108. ⟨10.1016/j.ndteint.2013.01.018⟩. ⟨hal-00797211⟩

• Article dans une revue

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

G. Moschetti, M. Abbasi, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

Solid-State Electronics, 2013, 79, pp.268-273. ⟨10.1016/j.sse.2012.06.013⟩. ⟨hal-00795944⟩

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly…

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩

• Autre publication scientifique

Etude de films minces de CuInS2, CuIn1-xGaxS2, et Cu2ZnSnS4, élaborés par voie sol-gel, destinés aux applications photovoltaïques

Yoan Bourlier

2013. ⟨hal-00825116⟩

• Article dans une revue

Optimal PWR codes for TH-PPM UWB multiple-access interference mitigation

K. Kouassi, Laurent Clavier, I. Doumbia, P. Rolland

IEEE Communications Letters, 2013, 17, pp.103-106. ⟨10.1109/LCOMM.2012.112812.122204⟩. ⟨hal-00795949⟩

• Communication dans un congrès

AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD

Philippe Altuntas, N. Defrance, Marie Lesecq, Adrien Cutivet, Alain Agboton, Yvon Cordier, Magdalena Chmielowska, Stephanie Rennesson, Julien Camus, Keltouma Aït Aïssa, Laurent Le Brizoual, Mohamed Abdou Djouadi, Jean-Claude de Jaeger

AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic…

22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. paper 5.6, 2 p. ⟨hal-00877773⟩

• Article dans une revue

Electronic structure and transport properties of Si nanotubes

J. Li, T. Gu, C. Delerue, Y.M. Niquet

The electronic structure and the transport properties of Si nanotubes with outer diameter between 2 and 20 nm are investigated using fully atomistic simulations. A formula is given for the energy of the band edges versus diameter and thickness. The phonon-limited mobility of electrons and holes is…

Journal of Applied Physics, 2013, 114 (5), pp.053706. ⟨10.1063/1.4817527⟩. ⟨hal-00871969⟩

• Communication dans un congrès

Functionalized gold nanoparticles with electropolymerizable conjugated systems for organic transistors behaving as biological synapse

A. Yassin, M. Oçafrain, David Guérin, S. Lenfant, D. Vuillaume, J. Roncali, P. Blanchard

44th World Chemistry Congress, IUPAC 2013, 2013, Istanbul, Turkey. ⟨hal-00878801⟩

• Article dans une revue

Electrowetting on functional fibers

Renaud Dufour, Alfred Dibao-Dina, Maxime Harnois, Xuyuan Tao, Claude Dufour, Rabah Boukherroub, Vincent Senez, Vincent Thomy

We report on experiments of electrowetting on dielectric (EWOD) on functional fibers in air. Firstly, we investigate the evolution of drop contact angle θ with the applied voltage Vrms. θ(Vrms) relationship is compared to the theoretical Young–Dupre model and shows a good agreement at low voltage.…

Soft Matter, 2013, 9 (2), pp.492-497. ⟨10.1039/C2SM26295A⟩. ⟨hal-00796449⟩

• Communication dans un congrès

[Invited] ATILA++ update

Pascal Mosbah

66th ICAT/JTTAS Joint International Smart Actuator Symposium, 2013, State College, PA, United States. ⟨hal-01044823⟩