Publications

Affichage de 7611 à 7620 sur 16173


  • Proceedings/Recueil des communications

Termodinamica, Definizioni e Principi (Thermodynamics, Definitions and Principles)

Raffaele Pisano

Viaggio alla scoperta della vita e delle opera del Conte Paolo Ballada di Saint Robert, ASC Torre del Conte Paolo Ballada di Saint Robert – onlus, pp.13-14, 2013. ⟨hal-04513916⟩

  • Article dans une revue

Highly efficient terahertz detection by optical mixing in a GaAs photoconductor

Emilien Peytavit, F. Pavanello, Guillaume Ducournau, Jean-Francois Lampin

Applied Physics Letters, 2013, 103, 201107, 4 p. ⟨10.1063/1.4830360⟩. ⟨hal-00903765⟩

  • Article dans une revue

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

A. Westlund, P. Sangare, Guillaume Ducournau, P.A. Nilsson, Christophe Gaquière, L. Desplanque, X. Wallart, J. Grahn

Applied Physics Letters, 2013, 103, pp.133504-1-4. ⟨10.1063/1.4821949⟩. ⟨hal-00872026⟩

  • Article dans une revue

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Pierre Capiod, Tao Xu, Jean-Philippe Nys, Maxime Berthe, Gilles Patriarche, Liverios Lymperakis, J. Neugebauer, Philippe Caroff, Rafal E Dunin-Borkowski, Philipp Ebert, B. Grandidier

Applied Physics Letters, 2013, 103, pp.122104-1-4. ⟨10.1063/1.4821293⟩. ⟨hal-00871957⟩

  • Article dans une revue

Frequency and angular bandwidth of acousto-optic deflectors with ultrasonic walk-off

Jean-Claude Kastelik, Samuel Dupont, Konstantin B. Yushkov, Joseph Gazalet

Ultrasonics, 2013, 53, pp.219-224. ⟨10.1016/j.ultras.2012.06.003⟩. ⟨hal-00796423⟩

  • Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the…

43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania. ⟨hal-03285110⟩

  • Proceedings/Recueil des communications

Notes on the historical conceptual streams for mathematics and physics teaching

Raffaele Pisano

Proceedings of the Lithuanian Mathematical Society, Ser. A, Serie A (54), Vilnius university, pp.vii-xvii, 2013, 0132-2818. ⟨hal-04513852⟩