Publications

• Communication dans un congrès

News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinning

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stievenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819689⟩

• Article dans une revue

Rate equations analysis of a dual-wavelength quantum cascade laser

A. Hamadou, Jean-Luc Thobel, S. Lamari

Optics Communications, 2013, 305, pp.147-154. ⟨10.1016/j.optcom.2013.05.004⟩. ⟨hal-00872061⟩

• Communication dans un congrès

Dielectric polarization 1/f noise in 0D MOS transistors and ion-sensitive field-effect transistors

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

22nd International Conference on Noise and Fluctuations, ICNF 2013, 2013, Montpellier, France. ⟨hal-00820950⟩

• Autre publication scientifique

Design, fabrication and characterization of MEMS-based oscillating AFM probes

Zhuang Xiong

2013. ⟨hal-00799260⟩

• Communication dans un congrès

Gain of spatial diversity techniques in tunnel environment

M. Lienard, Jose Maria Molina-Garcia-Pardo, Pierre Degauque, Davy Gaillot

It is well known that diversity techniques improve the signal to noise ratio and are thus widely used both for SIMO or MIMO configurations. Their performances, described in the literature, are based on the assumption of a Rayleigh or Rice fading distribution of the electric field. However, in…

17th WSEAS International Conference on Communications, CIRCOM 2013, 2013, Rhodes Island, Greece. paper 70303-106, 99-103. ⟨hal-00994840⟩

• Communication dans un congrès

Focused ion beam Ga3+ for the realization of piezoelectric PZT nano structures

Denis Remiens

Piezoelectric nano-structures (islands of dimensions in the lateral size range 50-500 nm) have been fabricated by Focused Ga3+ Ion Beam (FIB) etching on PbZr0.54Ti0.46O3 thin films obtained by magnetron sputtering. The degradation induced by the etching process is investigated through the evolution…

3rd International Conference on Nanotek & Expo, 2013, Las Vegas, NV, United States. ⟨hal-00947582⟩

• Article dans une revue

Preface for the special issue of MTAP following CBMI 2011

José M. Martínez, Bernard Merialdo, Jenny Benois-Pineau, Joemon Jose

Multimedia Tools and Applications, 2013, 62 (1), pp.1 - 4. ⟨10.1007/s11042-011-0927-6⟩. ⟨hal-01437497⟩

• Article dans une revue

Pavlov's dog associative learning demonstrated on synaptic-like organic transistors

O. Bichler, W. Zhao, F. Alibart, S. Pleutin, S. Lenfant, D. Vuillaume, C. Gamrat

In this paper we present an original demonstration of an associative learning neural network inspired by the famous Pavlov’s dogs experiment. A single nanoparticle organic memory field effect transistor (NOMFET) is used to implement each synapse. We show how the physical properties of this dynamic…

Neural Computation, 2013, 25, pp.549-566. ⟨10.1162/NECO_a_00377⟩. ⟨hal-00795977⟩

• Article dans une revue

Electrowetting at a liquid metal-oxide-semiconductor junction

S. Arscott

A voltage polarity dependent, voltage-induced wetting transition is demonstrated using a liquid metal-oxide-semiconductor (MOS) junction. A droplet of mercury can be made to spread out on an oxidized silicon wafer upon the application of a voltage. The wetting is seen to depend on the doping type…

Applied Physics Letters, 2013, 103 (14), pp.144101-1-5. ⟨10.1063/1.4822308⟩. ⟨hal-00871933⟩

• Article dans une revue

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

N. Clement, X.L. Han, Guilhem Larrieu

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the…

Applied Physics Letters, 2013, 103 (26), pp.263504. ⟨10.1063/1.4858955⟩. ⟨hal-00922923⟩