Publications

• Communication dans un congrès

Measuring the size distribution of paramagnetic nanoparticles in the vibrating sample magnetometer

Sergey Koshelyuk

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. papier 204, 3 p. ⟨hal-00957775⟩

• Communication dans un congrès

Deterministic placement of doping atoms on hydroxylated surfaces

L. Mathey, L. Veyre, H. Fontaine, V. Enyedi, K. Yckache, J. Guerrero, N. Chevalier, F. Martin, J.P. Barnes, F. Bertin, C. Durand, Maxime Berthe, B. Grandidier, C. Thieuleux, C. Coperet

An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated…

International Conference on Solid State Devices and Materials, SSDM 2013, 2013, Fukuoka, Japan. ⟨10.7567/SSDM.2013.B-3-2⟩. ⟨hal-00956279⟩

• Article dans une revue

Rate equations analysis of a dual-wavelength quantum cascade laser

A. Hamadou, Jean-Luc Thobel, S. Lamari

Optics Communications, 2013, 305, pp.147-154. ⟨10.1016/j.optcom.2013.05.004⟩. ⟨hal-00872061⟩

• Article dans une revue

Peroxynitrite activity of hemin-functionalized reduced graphene oxide

R. Oprea, S. Peteu, P. Subramanian, Qiang Wang, E. Pichonat, H. Happy, M. Bayachou, Rabah Boukherroub, Sabine Szunerits

Analyst, 2013, 138, pp.4345-4352. ⟨10.1039/C3AN00678F⟩. ⟨hal-00871895⟩

• Communication dans un congrès

Self-aligned contacts for 10nm FDSOI node : from device to circuit evaluation

H. Niebojewski, C. Le Royer, Y. Morand, O. Rozeau, M.A. Jaud, S. Barnola, C. Arvet, J. Pradelles, J. Bustos, J.M. Pedini, Emmanuel Dubois, O. Faynot

We propose an original architecture adapted to the 10nm transistor node (pitch 64nm) for FDSOI technology. This structure features self-aligned contacts and a gate capping dielectric layer preventing any short in case of lithographic misalignment of contacts. 2D simulations are carried out to…

39th IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, IEEE S3S 2013, 2013, Monterey, CA, United States. paper 6a.4, 2 p., ⟨10.1109/S3S.2013.6716549⟩. ⟨hal-00955675⟩

• Article dans une revue

Toward highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland

International Journal of Microwave and Wireless Technologies, 2013, 5, pp.335-340. ⟨10.1017/S1759078713000342⟩. ⟨hal-00871899⟩

• Communication dans un congrès

Theoretical insights in weakly interacting epitaxial systems

I. Lefebvre, J.J. Wang

Workshop on Functional Oxides for Integration in Micro- and Nano-Electronics, 2013, Autrans, France. ⟨hal-00811811⟩

• Communication dans un congrès

Ultrahigh sensitive terahertz detection by asymmetric dual-grating gate HEMT structure

Y. Kurita, Guillaume Ducournau, K. Kobayashi, Y. Meziani, V. Popov, Wojciech Knap, T. Otsuji

International Workshop on Terahertz Science and Technology, OTST 2013, 2013, Kyoto, Japan. ⟨hal-00811840⟩

• Autre publication scientifique

Conception, fabrication et caractérisation de métamatériaux à indice négatif pour les longueurs d'onde submillimétriques

Nadia Soltani

2013. ⟨hal-00919542⟩

• Communication dans un congrès

ANL-MEMS : Techniques d'imagerie acoustique non linéaire pour l'étude de la fiabilité des MEMS

Olivier Bou Matar, V. Aleshin, Abdelkrim Talbi, Huan Zhou, Nikolay Chigarev, Vitali Goussev, C. Ni, V. Tournat

Journées Nationales en Nanosciences et Nanotechnologies, J3N 2013, 2013, Marseille, France. ⟨hal-00940897⟩