Publications

• POSTER

Microstructure et Propriétés Piézoélectriques Mesurées aux Echelles Macroscopique et Nanométrique de Couches Minces de Ba_0,85Ca_0,15Ti_0,9Zr_0,1O₃ (BCTZ) Déposées par Ablation Laser Pulsé sur Différents Substrats pour la Récupération d’Energie

Marie-Hélène Chambrier, Donovan Ledru, Moustapha Azankoud, Renaud Valois, Guillaume Demily, Ilham Hamdi Alaoui, Françoise Le Marrec, Nathalie Lemée, Freddy Ponchel, Denis Remiens, Antonio da Costa, Anthony Ferri, Rachel Desfeux

• POSTER

An in-cell weight update scheme using one-hot gradients for on-chip learning

Mathieu Chêne, Benoit Larras, Andreas Kaiser, Antoine Frappé

<div><p>In the context of the Internet of Things , the trend is towards using artificial intelligence to process the data stream and extract useful information from it. In sensor networks, the most common approach is to send the raw data to a cloud to be processed by a centralised AI.…

18ème édition du Colloque National du GDR SoC2, Jun 2024, Toulouse, France. ⟨hal-05304131⟩

• COMM

Field confinement and its analysis in the THz range

Théo Hannotte, Ali Reda, Romain Peretti

Confining the electromagnetic field in sub wavelength volume is a widespread challenge in any range of photonics. One of the specificities of the THz range is the relatively low losses of metal allowing the use of metallic structure to achieve this confinement. In this conference, we will show: -…

The 11th International Symposium on Terahertz-Related Devices and Technologies, Jun 2024, Buffalo, United States. ⟨hal-04610036v2⟩

• COMM

Event-Driven Neural Network for Ultra-Low-Power On-Chip Keyword Spotting

Marc Chevalier, Benoit Larras, Antoine Frappé

Colloque National du GDR SoC², Jun 2024, Toulouse, France. ⟨hal-05053939⟩

• ART

Plasmon-driven creation of magnetic topological structures

W. Al Saidi, R. Sbiaa, Y. Dusch, N. Tiercelin

We demonstrate the creation and control of magnetic topological textures in thin film structures by plasmonic effects. From electromagnetic and photothermal models, the heat and absorption were determined, then the results were implemented in micromagnetic formalism to study the dynamics of…

Applied Physics Letters, 2024, 124 (24), ⟨10.1063/5.0208694⟩. ⟨hal-04665796⟩

• COMM

The next Millimeter-Wave breakthrough coming up with advanced AlN/GaN transistors

L. Ben-Hammou, Francois Grandpierron, Kathia Harrouche, F Medjdoub

<div><p>GaN-based material enables higher power density, superior breakdown voltage, and higher thermal conductivity as compared to its counterparts. On the other hand, the poweradded-efficiency (PAE) becomes a key parameter in order to support complex waveforms with high peak-to-…

GaN Marathon, Jun 2024, Verone, Italy. ⟨hal-04762018⟩

• THESE

Métasurfaces désordonnées pour l'absorption aux longueurs d'onde infrarouges, Disordered metasurfaces for absorption at infrared wavelengths

Roman Buisine

L'emploi de désordre dans la position des méta-atomes permet d'améliorer les propriétés de rayonnement électromagnétique des métasurfaces par rapport aux configurations périodiques. D'autre part, les techniques émergentes d'auto-assemblage peuvent être mises à profit pour…, The use of disorder in the position of meta-atoms allows for the improvement of the electromagnetic radiation properties of metasurfaces compared to periodic configurations. On the other hand, emerging self-assembly techniques can be leveraged to reduce the time and cost of their fabrication. This…

Optique / photonique. Université de Lille, 2024. Français. ⟨NNT : 2024ULILN011⟩. ⟨tel-04666500⟩

• POSTER

Carrier density analysis in stressed n-doped GaN on sapphire layers

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Éric Frayssinet, Adrien Bidaud, Florian Bartoli, Yvon Cordier, F Medjdoub, Dominique Planson, Cyril Buttay

GaN Marathon 2024, Jun 2024, Verona, Italy. 2024. ⟨hal-05054677⟩

• COMM

Carrier density analysis in stressed n-doped GaN layers on sapphire

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Éric Frayssinet, Adrien Bidaud, Florian Bartoli, Yvon Cordier, F Medjdoub, Dominique Planson, Cyril Buttay

Using micro-Raman spectroscopy on MOCVD slightly n-doped GaN on sapphire structures (1.5 x 10$^{15}$ cm$^{-3}$ – 6.5 x 10$^{15}$ cm$^{-3}$), we report a method to dissociate biaxial stress contribution from n carrier concentration contribution in A1(LO) Raman peak position. For all characterized…

GaN Marathon, Jun 2024, Vérone, Italy. ⟨hal-04639487⟩

• COMM

Low-Energy Floating-Point Flash Attention Mechanisms for 18nm FD-SOI CMOS

Joaquin Antonio Cornejo, Filipe Pouget, Sylvain Clerc, Tifenn Hirtzlin, Benoit Larras, Andreia Cathelin, Antoine Frappé

Colloque National du GDR SoC², Jun 2024, Toulouse, France. ⟨hal-05053945⟩