Publications

• COMM

Transport properties of strained silicon nanowires

Y.M. Niquet, C. Delerue, V.H. Nguyen, Christophe Krzeminski, F. Triozon

42nd European Solid-State Device Research Conference, ESSDERC 2012, 2012, Bordeaux, France. pp.session C3L-G, 290-293, ⟨10.1109/ESSDERC.2012.6343390⟩. ⟨hal-00801132⟩

• ART

Different types of phase separation in binary monolayers of long chain alkyltrichlorosilanes on silicon oxide

S. Desbief, L. Patrone, D. Goguenheim, D. Vuillaume

RSC Advances, 2012, 2, pp.3014-3024. ⟨10.1039/C2RA01327D⟩. ⟨hal-00787367⟩

• COMM

Strain effect on the electronic properties of thiolated 10-nm-diameter facetted gold nanocrystals

N. Clement, S. Desbief, K. Smaali, J.P. Nys, M. Cordier, G. Patriarche, S. Lamant, J. Oden, P. Leclere, D. Vuillaume

6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797692⟩

• ART

Investigation of indium nitride for micro-nanotechnology

Anisha Gokarna, Jean-Francois Lampin, Dominique Vignaud, El Hadj Dogheche, Didier Decoster, Sandra Ruffenach, Olivier Briot, Matthieu Moret

We present a study of non–intentionally doped InN epilayers directly grown on sapphire substrate by metal organic chemical vapour deposition (MOCVD) technique. Structural and optical characterisations of this sample have been conducted by SEM, temperature–dependent photoluminescence and time…

International Journal of Nanotechnology, 2012, 9 (10-12), pp.900-906. ⟨10.1504/IJNT.2012.049454⟩. ⟨hal-00787438⟩

• ART

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• COMM

Micro-résonateurs haute fréquence pour la microscopie à force atomique

B. Walter, M. Faucher, E. Mairiaux, Z. Xiong, L. Buchaillot, Bernard Legrand

15ème Forum des Microscopies à Sonde Locale, 2012, Saint-Jacut-de-la-Mer, France. ⟨hal-00797718⟩

• COMM

GaN MEMS resonators : from demonstration to microsystem-compatible performances

Marc Faucher, Achraf Ben Amar, Victor Y. Zhang, Yvon Cordier, Matthieu Werquin, Virginie Brandli, Bertrand Grimbert, Francois Vaurette, Pascal Tilmant, Marc François, Christophe Boyaval, Sylvie Lepilliet, Damien Ducatteau, Christophe Gaquière, Lionel Buchaillot, Didier Theron

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-4. ⟨hal-00801104⟩

• COMM

Extraction entre 40 MHz et 67 GHz de la permittivité complexe du KTa0.65Nb0.3503 déposé en couche mince

G. Houzet, T. Lacrevaz, C. Bermond, A. Le Febvrier, S. Deputier, Maryline Guilloux-Viry, K. Blary, B. Flechet

12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S1, papier ID52, 1-4. ⟨hal-00806607⟩

• COMM

Transmission exaltée à travers une ouverture sous longueur d'onde. Application aux méta-matériaux ferroélectriques

Véronique Sadaune, L. Kang, D. Lippens

12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S4, papier ID7, 1-4. ⟨hal-00806594⟩

• COMM

Technique multi-port pour la microscopie champ proche microonde

Kamel Haddadi, T. Lasri

2èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S8, papier ID18, 1-4. ⟨hal-00806622⟩