Publications

Affichage de 7921 à 7930 sur 16229


  • Communication dans un congrès

Bending effect on frequency performance of InAlAs/InGaAs HEMT transferred on flexible substrate

S. Bollaert, J.S. Shi, Nicolas Wichmann, Yannick Roelens

71st Annual Device Research Conference, DRC 2013, 2013, Notre Dame, IN, United States. paper III-31, 111-112, ⟨10.1109/DRC.2013.6633818⟩. ⟨hal-00904681⟩

  • Communication dans un congrès

Confocal Raman spectroscopy of graphene on hexagonal boron nitride

Sylvain Engels, F. Forster, A. Molina-Sanchez, A. Epping, K. Watanabe, T. Taniguchi, L. Wirtz, C. Stampfer

XXVIIth International Winterschool on Electronic Properties of Novel Materials, IWEPNM 2013, 2013, Kirchberg, Austria. ⟨hal-00903354⟩

  • Article dans une revue

Heterozygous and homozygous JAK2(V617F) states modeled by induced pluripotent stem cells from myeloproliferative neoplasm patients

Joseph Saliba, S. Hamidi, G. Lenglet, T. Langlois, J. Yin, X. Cabagnols, L. Secardin, C. Legrand, A. Galy, P. Opolon, B. Benyahia, E. Solary, O. A. Bernard, L. Chen, N. Debili, H. Raslova, F. Norol, W. Vainchenker, I. Plo, A. Di Stefano

JAK2(V617F) is the predominant mutation in myeloproliferative neoplasms (MPN). Modeling MPN in a human context might be helpful for the screening of molecules targeting JAK2 and its intracellular signaling. We describe here the derivation of induced pluripotent stem (iPS) cell lines from 2…

PLoS ONE, 2013, 8 (9), pp.e74257. ⟨10.1371/journal.pone.0074257⟩. ⟨hal-02881155⟩

  • Communication dans un congrès

THz wireless communications at high data rate using plasma-wave field-effect transistors for detection: State of the art and perspectives

S. Blin, L. Tohme, P. Nouvel, A. Pénarier, D. Coquillat, W. Knap, Guillaume Ducournau, Jean-Francois Lampin, S. Bollaert, S. Hisatake, T. Nagatsuma

GDRI – THz, 2013, Montpellier, France. ⟨hal-01929183⟩

  • Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩

  • Communication dans un congrès

Barrières tunnel épitaxiées sur graphène

F. Godel, E. Pichonat, D. Vignaud, B. Doudin, J.F. Dayen, D. Halley

XVe Colloque Louis Néel, Couches Minces et Nanostructures Magnétiques, 2013, Tours, France. papier MMCS-13, 233-234. ⟨hal-00878371⟩