Publications

• COMM

Characterization of the conducted noise generated by a PWM inverter on a 3-phase cable feeding a motor

K. Kilani, Virginie Degardin, Pierre Laly, M. Lienard

European Electromagnetics Symposium, EUROEM 2012, 2012, Toulouse, France. ⟨hal-00798231⟩

• COMM

NCs self-assembly mechanims revisited using advanced transmission electron microscopy

M. Cheynet, T. Neisius, E. Rauch, S. Lazar, G. Botton, O. Cristini, B. Grandidier

15th European Microscopy Congress, EMC 2012, 2012, Manchester, United Kingdom. ⟨hal-00798093⟩

• ART

Growth mechanism investigation of SnO2 thin films deposited by aerosol pyrolysis for biosensor applications: Importance of the thickness

V. Stambouli, M. Manesse, F. Ferrieu, L. Rapenne, Hervé Roussel, P. Chaudouet, Sabine Szunerits

Transparent conductive oxide films are suitable sensitive layers for gas sensors and biosensors, provided that their intrinsic properties are controlled, notably considering their thickness dependence. The present paper reports on a study of the variation of some physical properties of…

Thin Solid Films, 2012, 520 (11), pp.3878-3883. ⟨10.1016/j.tsf.2012.01.022⟩. ⟨hal-01067532⟩

• ART

Understanding of the Retarded Oxidation Effects in Silicon Nanostructures

Christophe Krzeminski, Xiang-Lei Han, Guilhem Larrieu

A new understanding of the retarded or self-limited oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and nanowires exhibits an extremely different and…

Applied Physics Letters, 2012, 100 (26), pp.263111. ⟨10.1063/1.4729410⟩. ⟨hal-00643617v2⟩

• ART

Non-radiative complete surface acoustic wave bandgap for finite-depth holey phononic crystal in lithium niobate

Didit Yudistira, Yan Pennec, Bahram Djafari-Rouhani, Samuel Dupont, Vincent Laude

We demonstrate the existence of non-radiative complete surface acoustic wave(SAW)bandgaps for two-dimensional piezoelectric phononic crystals of holes. Holes of finite depth in a semi-infinite LiNbO3 substrate are specifically considered. SAWbandgaps are determined from the band structure…

Applied Physics Letters, 2012, 100, pp.061912. ⟨10.1063/1.3684839⟩. ⟨hal-00759306⟩

• ART

Searching for THz Gunn oscillations in GaN planar nanodiodes

Ana Iniguez-De-La-Torre, Ignacio Íñiguez-De-La-Torre, Javier Mateos, Tomás González, Paul Sangare, Marc Faucher, Bertrand Grimbert, Virginie Brandli, Guillaume Ducournau, Christophe Gaquière

A detailed study of GaN-based planar asymmetric nanodiodes, promising devices for the fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo simulations, an analysis of the static I-V curves and the time-domain evolution of the current obtained when varying some…

Journal of Applied Physics, 2012, 111 (11), pp.113705. ⟨10.1063/1.4724350⟩. ⟨hal-00788170⟩

• COMM

4-port isolated MOS modeling and extraction for mmW applications

B. Dormieu, P. Scheer, C. Charbuillet, S. Jan, Francois Danneville

38th European Solid-State Circuits Conference, ESSCIRC 2012, 2012, Bordeaux, France. joint ESSDERC/ESSCIRC session B3L-A, paper ID 3149, 38-41, ⟨10.1109/ESSCIRC.2012.6341251⟩. ⟨hal-00801044⟩

• COMM

High frequency noise potentialities of reported CMOS 65 nm SOI technology on flexible substrate

Y. Tagro, A. Lecavelier Des Etangs-Levallois, L. Poulain, Sylvie Lepilliet, D. Gloria, C. Raynaud, Emmanuel Dubois, Francois Danneville

12th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems, SiRF 2012, 2012, Santa Clara, CA, United States. pp.89-92, ⟨10.1109/SiRF.2012.6160147⟩. ⟨hal-00801054⟩

• COMM

Lattice matched and pseudomorphic InGaAs MOSHEMT with fT of 200GHz

J.J. Mo, Nicolas Wichmann, Yannick Roelens, M. Zaknoune, L. Desplanque, X. Wallart, S. Bollaert

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.44-47, ⟨10.1109/ICIPRM.2012.6403314⟩. ⟨hal-00801055⟩

• COMM

High frequency epitaxial graphene fields effect transistors (GFET) on SiC

D. Mele, E. Pichonat, S. Fregonese, A. Ouerghi, H. Happy

13th Trends in Nanotechnology International Conference, TNT2012, 2012, Madrid, Spain. pp.1-2. ⟨hal-00801050⟩