Publications

• Article dans une revue

Tunable interdigitated capacitances on Ba0.3Sr0.7TiO3 thin-film

A. Ghalem, Freddy Ponchel, Denis Remiens, Jean-François Legier, T. Lasri

Integrated Ferroelectrics, 2013, 142, pp.44-51. ⟨10.1080/10584587.2013.780151⟩. ⟨hal-00877714⟩

• Autre publication scientifique

Modélisation de la propagation et de la réception des ondes élastiques émises par un défaut sous contrainte. Application à la simulation des contrôles non-destructifs par émission acoustique

Warida Ben Khalifa

2013. ⟨hal-00799262⟩

• Article dans une revue

Modeling of high contrast partially electroded resonators by means of a polynomial approach

P.M. Rabotovao, F.E. Ratolojanahary, Jean-Etienne Lefebvre, A. Raherison, L. Elmaimouni, Tadeusz Gryba, J.G. Yu

Journal of Applied Physics, 2013, 114 (12), pp.124502. ⟨10.1063/1.4821768⟩. ⟨hal-00877665⟩

• Communication dans un congrès

Les effets du couplage inter-éléments dans les réseaux de transducteurs acoustiques

Abdelmajid Bybi, Jamal Assaad, Sébastien Grondel, Marc Duquennoy, Anne-Christine Hladky, Christian Granger

6ème Colloque Interdisciplinaire en Instrumentation, C2I 2013, 2013, Lyon, France. pp.47-54. ⟨hal-00955219⟩

• Article dans une revue

Robust surface-potential-based compact model for GaN HEMT IC design

S. Khandelwal, C. Yadav, S. Agnihotri, Y.S. Chauhan, A. Curutchet, T. Zimmer, J.C. Dejaeger, N. Defrance, T.A. Fjeldly

IEEE Transactions on Electron Devices, 2013, 60, pp.3216-3222. ⟨10.1109/TED.2013.2265320⟩. ⟨hal-00872023⟩

• Article dans une revue

Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices

F Medjdoub, B. Grimbert, D. Ducatteau, N. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2013, 6, pp.044001-1-3. ⟨10.7567/APEX.6.044001⟩. ⟨hal-00809852⟩

• Communication dans un congrès

Non-contact air-coupled velocity measurements in planar samples

Qiang Liu, Bogdan Piwakowski, Zoubeir Lafhaj

Non-contact air-coupled technique has been applied to measure ultrasonic velocities in two planar samples, Plexiglas and mortar. Longitudinal waves and mode-converted shear velocities were obtained by three approaches. The obtained velocities were compared with that measured by contact method. The…

13th International Symposium on Nondestructive Characterization of Materials, NDCM-XIII, 2013, Le Mans, France. paper 15527, 7 p. ⟨hal-00971601⟩

• Communication dans un congrès

Effect of electric bias field and pressure on PMN-PT piezoelectric single crystals in Tonpilz transducers

C. Granger, Anne-Christine Hladky, J.C. Debus, T. Pastureaud, M. Doisy, M. Pham Thi

3rd Joint IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2013, Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials Workshop, PFM 2013, 2013, Prague, Czech Republic. ⟨hal-00934422⟩

• Article dans une revue

Multiple exciton generation and ultrafast exciton dynamics in HgTe colloidal quantum dots

Ali Al-Otaify, Stephen V. Kershaw, Shuchi Gupta, Andrey L. Rogach, Guy Allan, Christophe Delerue, David J. Binks

The investigation of sub-nanosecond exciton dynamics in HgTe colloidal quantum dots using ultrafast transient absorption spectroscopy is reported. The transmittance change spectrum acquired immediately after pumping is dominated by a bleach blue-shifted by ∼200–300 nm from the photoluminescent…

Physical Chemistry Chemical Physics, 2013, 15, pp.16864-16873. ⟨10.1039/C3CP52574K⟩. ⟨hal-00871970⟩

• Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever…

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩