Publications

• Article dans une revue

Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications

Etienne Herth, H Desré, Emmanuelle Algré, Christiane I. Legrand, Tuami Lasri

The aim of this work is to determine optimal deposition parameters of silicon nitride for optical applications. The authors present the investigation of hydrogenated amorphous silicon nitride SiNx:H deposited by the low temperature PECVD method in high frequency reactors. The study of hydrogen…

Microelectronics Reliability, 2012, 52 (1), pp.141-146. ⟨10.1016/j.microrel.2011.09.004⟩. ⟨hal-02300326⟩

• Communication dans un congrès

Narrow linewidth tunable THz signal radiated by 1.55 µm photomixing

Alain Rolland, Guillaume Ducournau, Goulc'Hen Loas, Alexandre Beck, Fabio Pavanello, Emilien Peytavit, Tahsin Akalin, Mohammed Zaknoune, Jean-Francois Lampin, Marc Brunel, François Bondu, Marc Vallet, Mehdi Alouini

THz has become a wide field of investigation opening new opportunities in a growing number of domains of physics, chemistry, and biology. Among the different techniques existing today to generate THz fields, heterodyning two optical frequencies is a useful approach when tunability is required.…

SPIE Optics + Photonics, Terahertz Emitters, Receivers, and Applications III, 2012, San Diego, CA, United States. pp.84960C-1-7, ⟨10.1117/12.929738⟩. ⟨hal-00803097⟩

• Article dans une revue

UWB communication system based on bipolar PPM with orthogonal waveforms

A. Elabed, F. Elbahhar, Yassin El Hillali, Atika Rivenq, Raja Elassali

Wireless Engineering and Technology, 2012, 3, pp.181-188. ⟨10.4236/wet.2012.33026⟩. ⟨hal-00788184⟩

• Article dans une revue

A parallel concatenated convolutional-based distributed coded cooperation scheme for relay channels

H. Ben Chikha, S. Chaoui, Iyad Dayoub, Jean-Michel Rouvaen, R. Attia

Wireless Personal Communications, 2012, 67, pp.951-969. ⟨10.1007/s11277-011-0433-1⟩. ⟨hal-00788179⟩

• Article dans une revue

High power density performances of SiGe HBT from BiCMOS technology at W-band

A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière

IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩. ⟨hal-00788168⟩

• Article dans une revue

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan

Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩

• Article dans une revue

Supercritical dynamics of magnetoelastic wave triad in a solid

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky

Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩

• Communication dans un congrès

Digital RF signal generation for ultimate transmitters

A. Frappé

BIT's 1st Annual World Congress of Emerging InfoTech, WCEIT 2012, 2012, Dalian, China. ⟨hal-00819471⟩

• Communication dans un congrès

Calcul de la résistance de Kapitza à l'interface cSi-aSiO2 à l'aide de la dynamique moléculaire

P.A. Francioso, E. Lampin, Pier Luca Palla, F. Cleri

13èmes Journées de la Matière Condensée, JMC13, 2012, Montpellier, France. ⟨hal-00798097⟩

• Article dans une revue

Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHz

F Medjdoub, Yoann Tagro, Malek Zegaoui, B. Grimbert, Francois Danneville, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up to 40 GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency…

IEEE Electron Device Letters, 2012, 33 (9), pp.1258-1260. ⟨10.1109/LED.2012.2205215⟩. ⟨hal-00786956⟩