Publications

• ART

First demonstration of high-power GaN-on-silicon transistors at 40 GHz

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an optimized double heterostructure based on ultrathin barrier AlN/GaN allows both high current density and low leakage…

IEEE Electron Device Letters, 2012, 33 (8), pp.1168-1170. ⟨10.1109/LED.2012.2198192⟩. ⟨hal-00786912⟩

• ART

Mechanism of ohmic Cr/Ni/Au contact formation on p-GaN

L. Magdenko, G. Patriarche, David Troadec, O. Mauguin, E. Morvan, M.A. Di Forte-Poisson, K. Pantzas, A. Ougazzaden, A. Martinez, A. Ramdane

Journal of Vacuum Science and Technology, 2012, 30, pp.022205-1-5. ⟨10.1116/1.3688486⟩. ⟨hal-00788195⟩

• COMM

Contact mechanics based on Preisach analysis

Vladislav Aleshin

The origin of acoustic contact nonlinearity is in nonlinear force-displacement relationships for mechanical contacts between solids or surfaces. The response of a particular contact depends on shapes of contacting surfaces (regular or random) as well as on external excitation (normal and/or…

European GDR-Workshop on Nonlinearities in Acoustics, 2012, Nice, France. ⟨hal-00819461⟩

• ART

In situ silicon-integrated tuner for automated on-wafer mmW noise parameters extraction using multi-impedance method for transistor characterization

Y. Tagro, N. Waldhoff, D. Gloria, S. Boret, Gilles Dambrine

IEEE Transactions on Semiconductor Manufacturing, 2012, 25, pp.170-177. ⟨10.1109/TSM.2011.2181673⟩. ⟨hal-00819467⟩

• ART

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-…

• ART

Ultrasonic tomographic reconstruction of liquid flows using phase-conjugate waves

Y.V. Pyl'Nov, S.S. Koshelyuk, Philippe Pernod, Y.I. Kutlubaeva

Physics of Wave Phenomena, 2012, 20, pp.231-234. ⟨10.3103/S1541308X12030119⟩. ⟨hal-00787371⟩

• ART

Decoding metric study for turbo codes in very impulsive environment

W. Gu, Laurent Clavier

IEEE Communications Letters, 2012, 16, pp.256-258. ⟨10.1109/LCOMM.2011.112311.111504⟩. ⟨hal-00786905⟩

• ART

Hysteretic magnetoresistance in stress controled magnetic memory device

Yannick Dusch, V. Rudenko, Nicolas Tiercelin, S. Giordano, Vladimir Preobrazhensky, Philippe Pernod

Nanomaterialy i nanostruktury XXI vek., 2012, 2, pp.44-50. ⟨hal-00787359⟩

• ART

Lode dependency in the cold die powder compaction process

S.A. Rolland, P. Mosbah, D.T. Gethin, R.W. Lewis

Powder Technology, 2012, 221, pp.123-136. ⟨10.1016/j.powtec.2011.12.044⟩. ⟨hal-00786891⟩

• ART

Intra-band gap in Lamb modes propagating in a periodic solid structure

J. Pierre, M. Renier, Bernard Bonello, Anne-Christine Hladky

Journal of Physics D: Applied Physics, 2012, 45, pp.185305-1-5. ⟨10.1088/0022-3727/45/18/185305⟩. ⟨hal-00786888⟩