Publications

Affichage de 8261 à 8270 sur 16387


  • Communication dans un congrès

Milliwatt-level power generated in the sub-terahertz range by photomixing in a metal-metal resonant cavity GaAs photoconductor

Emilien Peytavit, Sylvie Lepilliet, Francis Hindle, Christophe Coinon, Tahsin Akalin, Guillaume Ducournau, Gaël Mouret, Jean-Francois Lampin

It is shown from on-wafer measurement that a continuous wave output power of 0.35 mW at 305 GHz can be generated by photomixing in a metal-metal Fabry-Pérot GaAs photoconductor.

Conference on Lasers and Electro-Optics, CLEO 2012, Laser Science to Photonic Applications, May 2012, San Jose, CA, United States. paper CTu1B.2, 1-2, ⟨10.1364/CLEO_SI.2012.CTu1B.2⟩. ⟨hal-00803094⟩

  • Proceedings/Recueil des communications

On Lazare and Sadi Carnot. A synthetic view of a historical epistemological research program

Raffaele Pisano

Proceedings of the 20th annual SISFA Conference Società Italiana degli Storici della Fisica e dell’Astronomia, Argaglia, pp.147-153, 2012, 978-88-89731-42-0. ⟨hal-04513884⟩

  • Article dans une revue

Synthesis and characterization of hybrid conducting composites based on polyaniline/magnetite fillers with improved microwave absorption properties

B. Belaabed, J.L. Wojkiewicz, S. Lamouri, N. El Kamchi, T. Lasri

Journal of Alloys and Compounds, 2012, 527, pp.137-144. ⟨10.1016/j.jallcom.2012.02.179⟩. ⟨hal-00788272⟩

  • Article dans une revue

Microwave liquid sensing based on interferometry and microscopy techniques

Kamel Haddadi, H. Bakli, T. Lasri

IEEE Microwave and Wireless Components Letters, 2012, 22, pp.542-544. ⟨10.1109/LMWC.2012.2218230⟩. ⟨hal-00788274⟩

  • Article dans une revue

DC and high-frequency characteristics of GaN Schottky varactors for frequency multiplication

C. Jin, D. Pavlidis, L. Considine

IEICE Transactions on Electronics, 2012, E95-C, pp.1348-1353. ⟨10.1587/transele.E95.C.1348⟩. ⟨hal-00790415⟩

  • Article dans une revue

Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) silicon using a GaSb/GaP accommodation layer

L. Desplanque, S. El Kazzi, Christophe Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart

Applied Physics Letters, 2012, 101, pp.142111-1-4. ⟨10.1063/1.4758292⟩. ⟨hal-00787025⟩

  • Article dans une revue

The vibration dipole : a time reversed acoustics scheme for the experimental localisation of surface breaking cracks

B. van Damme, K. van den Abeele, Olivier Bou Matar

Applied Physics Letters, 2012, 100, pp.084103-1-3. ⟨10.1063/1.3690043⟩. ⟨hal-00787355⟩

  • Communication dans un congrès

In0.53Ga0.47As MOSFET with gate-first and gate-last process

J.J. Mo, Nicolas Wichmann, S. Bollaert

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801048⟩