Publications
Affichage de 8371 à 8380 sur 16055
Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy
Y. Wang, P. Ruterana, Jie Chen, L. Desplanque, S. El Kazzi, X. Wallart
Journal of Physics: Condensed Matter, 2012, 24, pp.335802-1-7. ⟨10.1088/0953-8984/24/33/335802⟩. ⟨hal-00787023⟩
480-GHz fmax in InP/GaAsSb/InP DHBT with new base isolation µ-airbridge design
M. Zaknoune, E. Mairiaux, Yannick Roelens, N. Waldhoff, U. Rouchy, P. Frijlink, M. Rocchi, H. Maher
IEEE Electron Device Letters, 2012, 33, pp.1381-1383. ⟨10.1109/LED.2012.2210187⟩. ⟨hal-00786893⟩
Magnetic and electric coupling effects of dielectric metamaterial
F. Zhang, L. Kang, Q. Zhao, J. Zhou, D. Lippens
New Journal of Physics, 2012, 14, pp.033031-1-15. ⟨10.1088/1367-2630/14/3/033031⟩. ⟨hal-00786984⟩
Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces
Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart
EPL - Europhysics Letters, 2012, 97, pp.68011-1-6. ⟨10.1209/0295-5075/97/68011⟩. ⟨hal-00786985⟩
Integrative Technology-Based Approach of Microelectromechanical Systems (MEMS) for Biosensing Applications
Liviu Nicu, Thomas Alava, Thierry Leichle, Daisuke Saya, Jean Bernard Pourciel, Fabrice Mathieu, Caroline Soyer, Denis Remiens, Cédric Ayela, Karsten Haupt
EMBC'12, 2012, San Diego, United States. 4 p. ⟨hal-00865903⟩
Robustness of high-resolution channel parameter estimators in presence of dense multipath components
E. Tanghe, D.P. Gaillot, W. Joseph, M. Lienard, Pierre Degauque, L. Martens
Electronics Letters, 2012, 48, pp.130-132. ⟨10.1049/el.2011.3454⟩. ⟨hal-00788224⟩
Experimental investigation on channel characteristics in tunnel environment for time reversal ultra wide band techniques
C. Garcia-Pardo, M. Lienard, Pierre Degauque, J.M. Molina-Garcia-Pardo, L. Juan-Llacer
Radio Science, 2012, 47, pp.RS1009-1-9. ⟨10.1029/2011RS004893⟩. ⟨hal-00788200⟩
Dielectric, ferroelectric and piezoelectric properties of 100-oriented Pb0.4Sr0.6TiO3 thin film sputtered on LaNiO3 electrode
X. Lei, Denis Remiens, N. Sama, Y. Chen, C.L. Mao, X.L. Dong, G.S. Wang
Journal of Crystal Growth, 2012, 347, pp.15-18. ⟨10.1016/j.jcrysgro.2012.03.026⟩. ⟨hal-00788337⟩
435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing
S. Bouzid, H. Maher, N. Defrance, Virginie Hoel, F. Lecourt, M. Renvoise, Jean-Claude de Jaeger, P. Frijlink
Electronics Letters, 2012, 48, pp.69-71. ⟨10.1049/el.2011.3605⟩. ⟨hal-00787867⟩
Monte Carlo study of self-heating in nanoscale devices
T. Sadi, R.W. Kelsall, N.J. Pilgrim, Jean-Luc Thobel, F. Dessenne
Journal of Computational Electronics, 2012, 11, pp.118-128. ⟨10.1007/s10825-012-0395-x⟩. ⟨hal-00788225⟩