Publications

• Communication dans un congrès

[Invited] New generation of flexible GHz graphene transistor

H. Happy, C. Sire, F. Ardiaca, Sylvie Lepilliet, J.W.T. Seo, M.C. Hersam, Gilles Dambrine, Vincent Derycke

19th International Display Workshops joint with Asia Display 2012, IDW/AD'12, 2012, Kyoto, Japan. pp.139-140. ⟨hal-00801045⟩

• Communication dans un congrès

Comparaison de deux modèles de prédiction de la qualité vocale en contexte super-large bande

N. Côté, S. Möller, T. Mannoury

Deuxièmes Journées Perception Sonore, JPS 2012, 2012, Marseille, France. ⟨hal-00823448⟩

• Communication dans un congrès

Kinetics of N2(B3Πg) and N2(C3Πu) states in N2-Ar discharges sustained by a RF helical coupling device

Corinne Foissac, Jaroslav Krištof, Adriana Annusova, Pavel Veis, Philippe Supiot

A kinetic model is discussed for the two main emitting species (N2(B), N2(C)) of a N2-Ar plasma excited at 27 MHz by a helical cavity with operating pressure of 200 Pa. The present paper consistently illustrates, for miscellaneous Ar fractions and different positions, the great influence of the…

XXI Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, ESCAMPIG 2012, Jul 2012, Viana do Castelo, Portugal. paper P1.1.9, 1-2. ⟨hal-00802620⟩

• Communication dans un congrès

A set of predictive tools to diagnosis reconstitution and ageing behaviour of dairy powders

Bruno Richard, Ousmane Syll, Malika Toubal, Jean-Francois Le Page, Georges Nassar, Edouard Radziszewski, Bertrand Nongaillard, Pascal Debreyne, Pierre Schuck, Romain Jeantet, Guillaume Delaplace

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World Dairy Summit 2012, Nov 2012, Cap Town, South Africa. ⟨hal-01209367⟩

• Communication dans un congrès

Dielectric Parameters Study of insulation Wire Free of Volatile Organic Compound

S. Ait Amar, D. Roger, G. Velu, M. Ben Fatallah, A. Habas, J.-P. Habas, P. Notingher, P. Frezel

IEEE Annual Conf. on El. Insulation and Diel. Phenomena CEIDP, 2012, Montréal, Canada. ⟨hal-01882817⟩

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or…

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩

• Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to…

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

• Article dans une revue

Low power sessile droplets actuation via modulated surface acoustic waves

Michael Baudoin, Philippe Brunet, Olivier Bou Matar, Etienne Herth

Low power actuation of sessile droplets is of primary interest for portable or hybrid lab-on-a-chip and harmless manipulation of biofluids. In this paper, we show that the acoustic power required to move or deform droplets via surface acoustic waves can be substantially reduced through the forcing…

Applied Physics Letters, 2012, 100, pp.154102-1-4. ⟨10.1063/1.3701725⟩. ⟨hal-00787356⟩

• Article dans une revue

Effect of electrode materials on the scaling behavior of energy density in Pb(Zr0.96Ti0.03)Nb0.01O3 antiferroelectric films

J. Ge, G. Pan, Denis Remiens, Y. Chen, F. Cao, X.L. Dong, G.S. Wang

Applied Physics Letters, 2012, 101, pp.112905-1-3. ⟨10.1063/1.4752726⟩. ⟨hal-00788341⟩

• Article dans une revue

Influence of a superficial field of residual stress on the propagation of surface waves - Applied to the estimation of the depth of the superficial stressed zone

Marc Duquennoy, Mohammadi Ouaftouh, J. Deboucq, Jean-Etienne Lefebvre, Frédéric Jenot, Mohamed Ourak

Applied Physics Letters, 2012, 101, pp.234104-1-3. ⟨10.1063/1.4768434⟩. ⟨hal-00790364⟩