Publications

Affichage de 8551 à 8560 sur 16055


  • COMM

Etapes de conception et réalisation d un modulateur électro-optique à base de matériaux polymères.

Kenny R. Philippe Auguste, Mathieu Halbwax, Erick Paleczny, Jean-François Legier, Hind Mahé, Abdel Karim Ferchichi, Jean-Pierre Vilcot, Hong Wu Li

17è Journées Nationales Microondes (JNM 2011), May 2011, Brest, France. ⟨hal-00799834⟩

  • COMM

Impulsive Interference Mitigation in Ad Hoc Networks Based on Alpha-Stable Modeling and Particle Filtering

Nouha Jaoua, Emmanuel Duflos, Philippe Vanheeghe, Laurent Clavier, François Septier

In this paper, we tackle the problem of interference mitigation in ad hoc networks. In such context, the multiple access interference (MAI) is known to be of an impulsive nature. Therefore, the conventional Gaussian assumption can not be considered to model this type of interference. Contrariwise,…

International Conference on Acoustics, Speech and Signal Processing (ICASSP), 2011, May 2011, Prague, Czech Republic. pp.3548 - 3551, ⟨10.1109/ICASSP.2011.5946244⟩. ⟨hal-00640682⟩

  • ART

Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

M. Katsikini, F. Pinakidou, J. Arvanitidis, E.C. Paloura, S. Ves, Ph. Komninou, Z. Bougrioua, E. Iliopoulos, T.D. Moustakas

The effect of Fe and Si doping in GaN grown epitaxially on Al2O3 is studied using Extended X-ray Absorption Fine Structure (EXAFS) and Raman spectroscopies. The EXAFS analysis shows that in GaN samples grown by Molecular Beam Epitaxy (MBE) at 750 °C the Ga–Ga distance is about 0.19% longer than the…

Materials Science and Engineering: B, 2011, 176 (9), pp.723-726. ⟨10.1016/j.mseb.2011.02.028⟩. ⟨hal-02906735⟩

  • COMM

Growth of antimony-containing heterostructure nanowires by molecular beam epitaxy : crystal phase control, surfaces and interfaces

Philippe Caroff, Tao Xu, Kimberly A. Dick, S.R. Plissard, Thanh Hai Nguyen, B. Grandidier, X. Wallart

Growth of III-V nanowires has now gained some maturity and fundamental understanding of the growth mechanisms has dramatically progressed. However, there are only three families of III-Vs which have been extensively explored: nitrides, arsenides and phosphides. The growth and understanding of…

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium EE : Semiconductor nanowires - From fundamentals to applications, Apr 2011, San Francisco, CA, United States. ⟨hal-00807152⟩

  • COMM

Assessment of carrier multiplication in bulk PbS and PbSe

Mischa Bonn, Christophe Delerue, Joep J. H. Pijpers, Ronald Ulbricht, K.J. Tielrooijl, A. Osherov, Y. Golan, Guy Allan

Materials Research Society Spring Meeting 2011, Symposium B : Third-generation and emerging solar-cell technologies, Apr 2011, San Francisco, United States. ⟨hal-03317137⟩

  • COMM

What is the epistemological role of teaching physical and mathematical sciences?

Raffaele Pisano

Congresso Nazionale Mathesis 2010, Matematica: Apprendimento E Professionalità Docente Livorno, 15 –17 April, Apr 2011, Livorno, Italy. ⟨hal-04518870⟩