Publications

• ART

Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, David Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at…

Journal of Crystal Growth, 2011, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩

• ART

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, David Troadec, A. Soltani, A. Ougazzaden

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of…

Journal of Crystal Growth, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554254⟩

• PATENT

Microsystème de génération d'un jet synthétique, procédé de fabrication et dispositif de contrôle d'écoulement correspondants

L. Gimeno-Monge, Abdelkrim Talbi, Philippe Pernod, A. Merlen, Vladimir Preobrazhensky, R. Viard

N° de brevet: FR2947813 (A1). 2011. ⟨hal-00559182⟩

• ART

Mechanical characterization of aluminium nanofilms

Gregory Guisbiers, Etienne Herth, L. Buchaillot

The mechanical properties (Young’s modulus, hardness, wear resistance) of aluminium nanofilms on silicon substrate are studied. Size effect on these mechanical properties are exhibited. Young’s modulus, hardness and wear resistance increases when the thickness is reduced. Experimental…

Microelectronic Engineering, 2011, 88 (5), pp.844-847. ⟨10.1016/j.mee.2010.06.028⟩. ⟨hal-00579052⟩

• COMM

IMPROVE-LM - Imaging probe for vacuum environment and liquid medium

Bernard Legrand, J.P. Aime, L. Buchaillot

Journées Nationales Nanosciences et Nanotechnologies, J3N 2011, 2011, Strasbourg, France. ⟨hal-00807209⟩

• COMM

[Invité] Apport des micro et nano-systèmes pour la microscopie à force atomique

Benjamin Walter, Zhuang Xiong, Emmanuelle Algre, Estelle Mairiaux, Marc Faucher, Lionel Buchaillot, Bernard Legrand

Journées Nationales Nanosciences et Nanotechnologies, J3N 2011, 2011, Strasbourg, France. ⟨hal-00807204⟩

• COMM

Alternating current magnetoresistance for determination of electron mobility and concentration under the gate in submicrometer Si and GaN field effect transistors

R. Tauk, W. Knap, J. Lusakowski, M. Sakowicz, Z. Bougrioua, M. Aziz, P. Lorenzini, F. Boeuf, T. Skotnicki

Journées Franco-Libanaises Physique et Interfaces, JFLPI, 2011, Villeneuve d'Ascq, France. ⟨hal-00807634⟩

• COMM

Hydrothermal growth of ZnO nanorods on silicon substrate for white light emitting diode application

A. Gokarna, J.H. Kim, Floriane Leroy, El Hadj Dogheche, Y.H. Cho, Didier Decoster

6th International Conference on Materials for Advanced Technologies, ICMAT 2011, Symposium B : Synthesis and Architecture of Nanomaterials, 2011, Singapore, Singapore. ⟨hal-00807214⟩

• COMM

Fabrication of conducting IPN actuators for microsystems

Alexandre Khaldi, Cedric Plesse, D. Teyssie, C. Chevrot, Eric Cattan, F. Vidal

Stuttgart Nanodays International Conference, 2011, Stuttgart, Germany. ⟨hal-00807653⟩

• COMM

Cristaux phononiques à résonances locales

Yan Pennec, H. Larabi, Bahram Djafari-Rouhani, Abdellatif Akjouj, Gaëtan Lévêque

Colloque National Métamatériaux, CNM 2011, 2011, Orsay, France. ⟨hal-00807582⟩