Publications

• COMM

Novel AlGaN/GaN electronic nano-devices : application for sub-terahertz waves detection

P.A.D. Sangare, Guillaume Ducournau, B. Grimbert, M. Faucher, Christophe Gaquière

6èmes Journées Terahertz, 2011, La Grande-Motte, France. ⟨hal-00807612⟩

• COMM

Laboratoire sur puce pour la métrologie des liquides : l'exemple de l'hydratation des alcools

Simon Laurette, A. Treizebre, Basak Hatirnaz, Ludovic Duponchel, Frederic Affouard, Bertrand Bocquet

Journées Franco-Libanaises Physique et Interfaces, JFLPI, 2011, Villeneuve d'Ascq, France. ⟨hal-00807638⟩

• COMM

Influence de l'eau sur les propriétés électroniques de jonctions moléculaires sur silicium

N. Clement, S. Pleutin, David Guérin, D. Vuillaume

Matériaux et Nanostructures π-Conjugués, MNPC 11, 2011, Obernai, France. ⟨hal-00807726⟩

• COMM

[Invited] THz BioMEMS for biological interaction studies

Bertrand Bocquet

4ème Colloque du Laboratoire International Associé en Nanotechnologies et Nanosystèmes, 2011, Allevard-Les-Bains, France. ⟨hal-00807639⟩

• COMM

Une méthode Galerkin discontinue nodale pour la propagation non linéaire d'ondes élastiques fonctionnant sur carte graphique (GPU)

Olivier Bou Matar, P.Y. Guerder, Y. Li

XIIèmes Journées d'Acoustique Physique Sous-Marine et Ultrasonore, JAPSUS 2011, 2011, Lille, France. ⟨hal-00807174⟩

• COMM

Accuracy of specular path estimates with ESPRIT and RiMAX in the presence of measurement-based diffuse multipath components

D.P. Gaillot, E. Tanghe, P. Stefanut, W. Joseph, M. Lienard, Pierre Degauque, L. Martens

5th European Conference on Antennas and Propagation, EuCAP 2011, 2011, Italy. pp.3619-3622. ⟨hal-00603111⟩

• ART

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

T. Xu, J. Sulerzycki, J.P. Nys, G. Patriarche, B. Grandidier, D. Stievenard

We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked…

Nanoscale Research Letters, 2011, 6, pp.113-1-7. ⟨10.1186/1556-276X-6-113⟩. ⟨hal-00579084⟩

• ART

Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayer thickness

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Using transmission electron microscopy we investigate the influence of AlSb monolayers and substrate surface preparation on the microstructure of GaSb grown on GaAs (001) by molecular beam epitaxy. The geometric phase analysis method is used to analyze the interface dislocation type and the…

Journal of Applied Physics, 2011, 109, pp.023509-1-6. ⟨10.1063/1.3532053⟩. ⟨hal-00572649⟩

• ART

One port contour-mode ZnO piezoelectric MEMS resonator

Tadeusz Gryba, Julien Carlier, S.X. Wang, X.Z. Zhao, S. Guo, Jean-Etienne Lefebvre

This paper reports on design, fabrication and experimental testing of one port ZnO contour-mode resonant MEMS. The devices are fabricated from silicon wafers using a 4-mask process. The use of contour modes, whose frequencies are set by lithographically defined dimensions, permits the fabrication…

Microelectronic Engineering, 2011, 88, pp.3003-3010. ⟨10.1016/j.mee.2011.04.062⟩. ⟨hal-00639933⟩

• COMM

Stable superconducting niobium ultrathin films

C. Delacour, L. Ortega, M. Faucher, T. Crozes, T. Fournier, B. Pannetier, V. Bouchiat

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium Y : Functional two-dimensional layered materials, 2011, San Francisco, CA, United States. ⟨hal-00807207⟩