Publications

• Autre publication scientifique

Compensation numérique des non-linéarités des amplificateurs de puissance avec estimation des paramètres au niveau récepteur

Jan Zeleny

2011. ⟨hal-00799414⟩

• Article dans une revue

Characterization of AlGaN/GaN high electron mobility transistor grown on silicon carbide devices with a gate length Lg = 0.15 µm

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, W. Chikhaoui, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2178-2181. ⟨10.1166/sl.2011.1788⟩. ⟨hal-00795894⟩

• Article dans une revue

Coplanar liquid crystal reconfigurable phase-shifters

Fehim Sahbani, Nicolas Tentillier, Christian Legrand, Karine Blary, A. Gharsallah, A. Gharbi

A coplanar liquid crystal phase-shifter is presented and characterized in the frequency range of 5–40 GHz. The interest of this structure lies in the technological realization which is very simple. The phase-shift variation is of 0.2°/cm/GHz for an attenuation of 2.5 dB/cm at 40 GHz. These…

Molecular Crystals and Liquid Crystals, 2011, Issue 1: Proceedings of the 23rd International Liquid Crystal Conference (ILCC 2010) Part III of VIII Submit an article, 542, pp.204-212. ⟨10.1080/15421406.2011.570587⟩. ⟨hal-00795916⟩

• Article dans une revue

Identification and localization of electronic traps in AlGaN/GaN HEMTs on Al2O3 substrates using CDLTS

O. Fathallah, M. Gassoumi, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2380-2383. ⟨10.1166/sl.2011.1786⟩. ⟨hal-00795919⟩

• Article dans une revue

Low-temperature-grown GaAs photoconductor with high dynamic responsivity in the millimeter wave range

Emilien Peytavit, Christophe Coinon, Jean-Francois Lampin

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4, pp.104101-1-3. ⟨10.1143/APEX.4.104101⟩. ⟨hal-00639827⟩

• Article dans une revue

Poole-Frenkel assisted emissions from a barrier trap in AlGaN/GaN/Si HEMTs

H. Mosbahi, M. Gassoumi, H. Mejri, Christophe Gaquière, M.A. Zaidi, H. Maaref

Journal of Electron Devices, 2011, 11, pp.538-543. ⟨hal-00639919⟩

• Article dans une revue

One port contour-mode ZnO piezoelectric MEMS resonator

Tadeusz Gryba, Julien Carlier, S.X. Wang, X.Z. Zhao, S. Guo, Jean-Etienne Lefebvre

This paper reports on design, fabrication and experimental testing of one port ZnO contour-mode resonant MEMS. The devices are fabricated from silicon wafers using a 4-mask process. The use of contour modes, whose frequencies are set by lithographically defined dimensions, permits the fabrication…

Microelectronic Engineering, 2011, 88, pp.3003-3010. ⟨10.1016/j.mee.2011.04.062⟩. ⟨hal-00639933⟩

• Communication dans un congrès

Dual frequency Brillouin fiber laser and 1.55 µm photomixer for highly coherent THz wave generation

Guillaume Ducournau, P. Szriftgiser, Tahsin Akalin, Alexandre Beck, Denis Bacquet, Emilien Peytavit, Jean-Francois Lampin

Using a dual frequency Brillouin fiber laser and a 1.55 μm photomixer, we report the generation of a highly coherent kilo-Hertz level sub-millimeter wave emission. This system does not require any electrical synthesizer, and low cost telecom components are used to achieve very simple source…

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper Tu2E.2, 1-2, ⟨10.1109/irmmw-THz.2011.6105047⟩. ⟨hal-00800484⟩

• Communication dans un congrès

Polynomial modeling of acoustic guided wave propagation in homogeneous cylinder of infinite length

L. Elmaimouni, Jean-Etienne Lefebvre, F.E. Ratolojanahary, A. Raherison, Tadeusz Gryba

2nd International Conference on Multimedia Computing and Systems, ICMCS'11, 2011, Ouarzazate, Morocco. pp.1-6, ⟨10.1109/ICMCS.2011.5945602⟩. ⟨hal-00800401⟩

• Communication dans un congrès

THz emission induced by sub-threshold instability optical excited in nanometer-length field-effect transistors

P. Nouvel, J. Torres, H. Marinchio, A. Penot, C. Palermo, L. Varani, P. Shiktorov, E. Starikov, V. Gruzinskis, F. Teppe, Yannick Roelens, A. Shchepetov, S. Bollaert

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799965⟩