Publications

• Communication dans un congrès

Comparison of the tunability performances and loss factor up to 60 GHz of some ferroelectric materials : BST and doped BST, PST, hetero structures BST/BZN

Denis Remiens, Freddy Ponchel, Jean-François Legier, Caroline Soyer, T. Lasri, L. Yang, X.L. Lei, Gang Wang, X. Dong

Joint 20th IEEE International Symposium on Applications of Ferroelectrics and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF-PFM-2011, 2011, Vancouver, Canada. ⟨hal-00807661⟩

• Communication dans un congrès

Novel AlGaN/GaN electronic nano-devices : application for sub-terahertz waves detection

P.A.D. Sangare, Guillaume Ducournau, B. Grimbert, M. Faucher, Christophe Gaquière

6èmes Journées Terahertz, 2011, La Grande-Motte, France. ⟨hal-00807612⟩

• Communication dans un congrès

Design of electronic conducting polymer based microactuators by microsystem process

Ali Maziz, Cedric Plesse, Alexandre Khaldi, Caroline Soyer, C. Chevrot, D. Teyssie, Eric Cattan, F. Vidal

6th World Congress on Biomimetics, Artificial Muscles and Nano-Bio, 2011, Cergy-Pontoise, France. ⟨hal-00807674⟩

• Communication dans un congrès

Digital microfluidic on superhydrophobic surfaces for high sensitive mass spectrometry analysis

F. Lapierre, G. Piret, H. Drobecq, O. Melnyk, Yannick Coffinier, V. Thomy, Rabah Boukherroub

CSIRO Advanced Materials Conference, 2011, Melbourne, Victoria, Australia. ⟨hal-00807649⟩

• Communication dans un congrès

Laboratoire sur puce pour la métrologie des liquides : l'exemple de l'hydratation des alcools

Simon Laurette, A. Treizebre, Basak Hatirnaz, Ludovic Duponchel, Frederic Affouard, Bertrand Bocquet

Journées Franco-Libanaises Physique et Interfaces, JFLPI, 2011, Villeneuve d'Ascq, France. ⟨hal-00807638⟩

• Communication dans un congrès

[Invited] Monte Carlo simulation of quantum cascade lasers

Jean-Luc Thobel

IV Workshop on Physics and Technology of Semiconductor Lasers, 2011, Kazimierz Dolny, Poland. ⟨hal-00807622⟩

• Communication dans un congrès

Gbit/s wireless transmission at 200 GHz carrier using optoelectronics THz technologies

Guillaume Ducournau, Alexandre Beck, Tahsin Akalin, Emilien Peytavit, P. Szriftgiser, Denis Bacquet, Mohammed Zaknoune, Jean-Francois Lampin

6èmes Journées Terahertz, 2011, La Grande-Motte, France. ⟨hal-00807700⟩

• Article dans une revue

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

T. Xu, J. Sulerzycki, J.P. Nys, G. Patriarche, B. Grandidier, D. Stievenard

We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked…

Nanoscale Research Letters, 2011, 6, pp.113-1-7. ⟨10.1186/1556-276X-6-113⟩. ⟨hal-00579084⟩

• Article dans une revue

Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions

Y.M. Niquet, C. Delerue

Epitaxially grown semiconductor heterostructures make it possible to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily predictable behavior: it is constant everywhere except at the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (7), pp.075478. ⟨10.1103/PhysRevB.84.075478⟩. ⟨hal-00639883⟩

• Article dans une revue

Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayer thickness

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Using transmission electron microscopy we investigate the influence of AlSb monolayers and substrate surface preparation on the microstructure of GaSb grown on GaAs (001) by molecular beam epitaxy. The geometric phase analysis method is used to analyze the interface dislocation type and the…

Journal of Applied Physics, 2011, 109, pp.023509-1-6. ⟨10.1063/1.3532053⟩. ⟨hal-00572649⟩