Publications
Affichage de 9051 à 9060 sur 16227
Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode
M. Gassoumi, S. Saadaoui, M.M. Ben Salem, Christophe Gaquière, H. Maaref
European Physical Journal: Applied Physics, 2011, 55, pp.30101-1-4. ⟨10.1051/epjap/2011110136⟩. ⟨hal-00639884⟩
Étude par ultrasons-laser de l'influence d'un défaut débouchant sur la propagation des ondes acoustiques
Frédéric Faëse, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy
XIIèmes Journées d'Acoustique Physique Sous-Marine et Ultrasonore, JAPSUS 2011, 2011, Lille, France. ⟨hal-00807691⟩
Droplet based lab-on-chip microfluidic microsystems for high sensitive mass spectrometry analysis
F. Lapierre, G. Piret, G. Perry, V. Thomy, Yannick Coffinier, Rabah Boukherroub
5th International Workshop on Surface Modification for Chemical and Biochemical Sensing, SMCBS'2011, 2011, Lochow, Poland. ⟨hal-00807637⟩
Novel high-resolution localization method of mobile devices in non-line-of-sight scenarios
D.P. Gaillot, P. Stefanut, M. Liénard, Pierre Degauque
Final COST 2100 Management Committee Meeting, 2011, Paris, France. ⟨hal-00961423⟩
Accurate multibias equivalent-circuit extraction for AlGaN/GaN/Si HEMTs passivated SiO2/Si3N4
H. Mosbahi, M. Gassoumi, M.A. Zaidi, Christophe Gaquière, B. Grimbert, H. Maaref
European Materials Research Society Fall Meeting, E-MRS Fall 2011, Symposium H : Novel materials for electronics, optoelectronics, photovoltaics and energy saving applications, 2011, Warsaw, Poland. ⟨hal-00807603⟩
Coulomb energy determination of a single Si dangling bond
T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, D. Stievenard, P. Ebert
Herodot Summer School, 2011, Cargese, France. ⟨hal-00807579⟩
Characterization and modeling for the piezoelectric actuator of AlGaN/GaN-resonators
Achraf Ben Amar, Marc Faucher, Bertrand Grimbert, Virginie Brandli, Lionel Buchaillot, Christophe Gaquière, Didier Theron
20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00800035⟩
75-nm-T-shaped-gate InAlN/AlN/GaN HEMT on sapphire with 100 GHz cutoff frequency
F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, N. Ketteniss, H. Behmenburg, M. Eickelkamp, A. Vescan, C. Giesen, M. Heuken
6th European Microwave Integrated Circuits Conference, EuMIC 2011, 2011, Manchester, United Kingdom. pp.136-139. ⟨hal-00800110⟩
Materials chemistry for catalysis : coating of catalytic oxides on metallic foams
A. Essakhi, A. Löfberg, S. Paul, B. Mutel, P. Supiot, V. Le Courtois, P. Rodriguez, V. Meille, E. Bordes-Richard
Microporous and Mesoporous Materials, 2011, 140, pp.81-88. ⟨hal-00572663⟩
Growth rate model and doping metrology by atom probe tomography in silicon nanowire
W.H. Chen, R. Larde, E. Cadel, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, P. Pareige
Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8, pp.771-774. ⟨10.1002/pssc.201000233⟩. ⟨hal-00597124⟩