Publications

• ART

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT's on SiC substrates

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, B. Grimbert, Julien Fontaine, Christophe Gaquière, H. Maaref

Microelectronic Engineering, 2011, 88, pp.370-372. ⟨10.1016/j.mee.2010.09.027⟩. ⟨hal-00572669⟩

• ART

Controlling the transmission of ultrahigh frequency bulk acoustic waves in silicon by 45° mirrors

S. Wang, J. Gao, Julien Carlier, Pierre Campistron, Assane Ndieguene, S. Guo, Olivier Bou Matar, Dorothée Debavelaere-Callens, Bertrand Nongaillard

In this paper, we present a feasible microsystem in which the direction of localized ultrahigh frequency (∼1 GHz) bulk acoustic wave can be controlled in a silicon wafer. Deep etching technology on the silicon wafer makes it possible to achieve high aspect ratio etching patterns which can be used…

Ultrasonics, 2011, 51, pp.532-538. ⟨10.1016/j.ultras.2011.01.003⟩. ⟨hal-00574498⟩

• COMM

Efficient adaptation to channel state changes based on H.264/AVC transrating for power line transmission of video streams

Christophe Deknudt, A.S. Bacquet, Patrick Corlay, François-Xavier Coudoux, M. Slachciak

IEEE International Symposium on Power Line Communications and its Applications, ISPLC 2011, 2011, Italy. pp.CFP11843-USB, 141-145, ⟨10.1109/ISPLC.2011.5764380⟩. ⟨hal-00591355⟩

• COMM

Antennes accordables en fréquence dans la bande des 60 GHz sur substrat élastomère ultrasouple

S. Hage-Ali, Nicolas Tiercelin, Philippe Coquet, Yannick Dusch, Ronan Sauleau, Vladimir Preobrazhensky, Philippe Pernod

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.3C4, 1-4. ⟨hal-00597151⟩

• COMM

An EWOD driven millimeter-wave phase shifter using a movable ultrasoft metalized PDMS ground plane

S. Hage-Ali, Nicolas Tiercelin, F. Lapierre, Y. Orlic, M. Harnois, V. Thomy, Vladimir Preobrazhensky, Philippe Pernod, P. Coquet

16th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS'11, Jun 2011, Beijing, China. pp.522-525, ⟨10.1109/TRANSDUCERS.2011.5969671⟩. ⟨hal-00799996⟩

• COMM

Caractérisation des matériaux diélectriques en band X pour des applications de télécommunications

M.D. Belrhriti, S. Bri, A. Nakheli, M. Haddad, A. Mamouni

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Maroc. CDROM, session A2, papier 408, 1-2. ⟨hal-00591365⟩

• COMM

Monte Carlo simulation of electrical and thermal properties of nanowire-based insulated gate transistors

T. Sadi, Jean-Luc Thobel, F. Dessenne, Christophe Dalle

Thematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France. ⟨hal-00591397⟩

• ART

Complex permittivity of low loss materials in the X band

M.D. Belrhiti, S. Bri, A. Nakheli, A. Mamouni

International Journal of Science and Advanced Technology, 2011, 1, pp.221-224. ⟨hal-00639915⟩

• ART

InAlN/GaN HEMTs on sapphire substrate with 2.9-W/mm output power density at 18 GHz

F. Lecourt, N. Ketteniss, H. Behmenburg, N. Defrance, Virginie Hoel, M. Eickelkamp, A. Vescan, C. Giesen, M. Heuken, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2011, 32, pp.1537-1539. ⟨10.1109/LED.2011.2166949⟩. ⟨hal-00639917⟩

• ART

Shielded cable transfer impedance measurements in the microwave range of 1 GHz to 10 GHz

B. Demoulin, L. Kone

IEEE Electromagnetic Compatibility Society Newsletter, 2011, 229, pp.52-61. ⟨hal-00639920⟩