Publications

• Article dans une revue

Field-induced vortices in weakly anisotropic ferroelectrics

Anaïs Sené, Laurent Baudry, Igor A. Luk'Yanchuk, Laurent Delahoche, Y. El Amraoui

Superlattices and Microstructures, 2011, 49, pp.314-317. ⟨10.1016/j.spmi.2010.05.001⟩. ⟨hal-00574497⟩

• Communication dans un congrès

Nucleation of vortices structures in ferroelectrics

L. Baudry, A. Sene, Igor A. Luk'Yanchuk, L. Lahoche

Multifunctional Nanomaterials : Mediterranean - East Europe Meeting, NanoEuroMed 2011, 2011, Uzhgorod, Ukraine. ⟨hal-00807623⟩

• Article dans une revue

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland

High quality AlN/GaN heterostructures grown on silicon substrate are demonstrated. It is found that high carrier concentration can be achieved whereas circular diodes showed a low leakage current up to 200 V reverse bias. 200 nm gate length AlN/GaN transistors exhibited a drain current density of 1…

Applied Physics Letters, 2011, 98 (22), pp.223502-1-3. ⟨10.1063/1.3595943⟩. ⟨hal-00603008⟩

• Article dans une revue

Size-dependent catalytic and melting properties of platinum-palladium nanoparticles

G. Guisbiers, G. Abudukelimu, D. Hourlier

While nanocatalysis is a very active field, there have been very few studies in the size/shape-dependent catalytic properties of transition metals from a thermodynamical approach. Transition metal nanoparticles are very attractive due their high surface to volume ratio and their high surface energy…

Nanoscale Research Letters, 2011, 6, pp.396-1-5. ⟨10.1186/1556-276X-6-396⟩. ⟨hal-00639824⟩

• Article dans une revue

Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2011, 99, pp.203505-1-3. ⟨10.1063/1.3663533⟩. ⟨hal-00783377⟩

• Article dans une revue

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

J. Kuzmik, S. Bychikhin, D. Pogany, E. Pichonat, O. Lancry, Christophe Gaquière, G. Tsiakatouras, G. Deligeorgis, A. Georgakilas

Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman…

Journal of Applied Physics, 2011, 109 (8), pp.086106. ⟨10.1063/1.3581032⟩. ⟨hal-00591315⟩

• Article dans une revue

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this work we report on the characteristics of a (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques, such as gate current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) measurements have been used to characterize the…

Journal of Applied Physics, 2011, 110 (1), pp.013701-1-6. ⟨10.1063/1.3600229⟩. ⟨hal-00639910⟩

• Article dans une revue

Influence of cold remote nitrogen oxygen plasma treatment on carbon fabric and its composites with specialty polymers

S. Tiwari, M. Sharma, S. Panier, B. Mutel, P. Mitschang, J. Bijwe

Journal of Materials Science, 2011, 46, pp.964-974. ⟨10.1007/s10853-010-4847-z⟩. ⟨hal-00572655⟩

• Article dans une revue

Realization of ultra dense arrays of vertical silicon NWs with defect free surface and perfect anisotropy using a top-down approach

X.L. Han, G. Larrieu, Pier-Francesco Fazzini, Emmanuel Dubois

Microelectronic Engineering, 2011, 88, pp.2622-2624. ⟨10.1016/j.mee.2010.12.102⟩. ⟨hal-00795901⟩

• Communication dans un congrès

Prototyping of an insect-like nano aerial vehicle

A. Bontemps, T. Vanneste, J.B. Paquet, Sébastien Grondel, Eric Cattan

ASME 2011 International Mechanical Engineering Congress & Exposition, IMECE 2011, 2011, Denver, CO, United States. ⟨hal-00807676⟩