Publications

Affichage de 9291 à 9300 sur 16100


  • Communication dans un congrès

Compact nonlinear modeling for GaN-based power amplifier design

Christophe Gaquière, V. Di Giacomo

IEEE MTT-S International Microwave Symposium, IMS 2011, Workshop WFC - The design flow of microwave amplifiers : Challenges and future trends, 2011, Baltimore, MD, United States. ⟨hal-00807596⟩

  • Communication dans un congrès

Imaging techniques for direct defect analysis in SC diamonds : what scanning electron microscopy and cathodoluminescence can ultimately reveal

P.N. Volpe, S. Saada, Nicolas Tranchant, Jean-Charles Arnault, A. Soltani, F. Donatini, P. Bergonzo

16th International Hasselt Diamond Workshop, SBDD XVI, 2011, Hasselt, Belgium. ⟨hal-00807605⟩

  • Article dans une revue

Fluctuation theorem and microreversibility in a quantum coherent conductor

S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobayashi, T. Ono, R. Leturcq, K. Ensslin, K. Saito, Y. Utsumi, A.C. Gossard

Mesoscopic systems provide us a unique experimental stage to address nonequilibrium quantum statistical physics. By using a simple tunneling model, we describe the electron exchange process via a quantum coherent conductor between two reservoirs, which yields the fluctuation theorem (FT) in…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (15), pp.155431. ⟨10.1103/PhysRevB.83.155431⟩. ⟨hal-00597077⟩

  • Article dans une revue

Tunability of aluminum nitride acoustic resonators: a phenomenological approach

Emmanuel Defay, Nizar Ben Hassine, Patrick Emery, Guy Parat, Julie Abergel, Arnaud Devos

A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to 2.062 GHz at +200…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2011, 58, pp.2516-2520. ⟨10.1109/TUFFC.2011.2114⟩. ⟨hal-00783414⟩

  • Article dans une revue

Atomic scale investigation of silicon nanowires and nanoclusters

Manuel Roussel, W.H. Chen, Etienne Talbot, Rodrigue Lardé, E. Cadel, F. Gourbilleau, B. Grandidier, D. Stievenard, Philippe Pareige

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and…

Nanoscale Research Letters, 2011, 6, pp.271-1-6. ⟨10.1186/1556-276X-6-271⟩. ⟨hal-00597078⟩