Publications

• Communication dans un congrès

Influence de l'indium et l'azote sur la structure à puits quantique à base de Ga1-xInxAs1-xNy/GaAs

Abdelkader Aissat, Said Nacer, Mohamed Seghilani, Jean-Pierre Vilcot

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A4, papier 37, 1-4. ⟨hal-00591372⟩

• Article dans une revue

Geometry pattern for the wire organic electrochemical textile transistor

X.Y. Tao, V. Koncar, C. Dufour

Journal of The Electrochemical Society, 2011, 158, pp.H572-H577. ⟨10.1149/1.3562962⟩. ⟨hal-00591319⟩

• Autre publication scientifique

Transport quantique dans des nanostructures semiconductrices

Renaud Leturcq

2011. ⟨hal-00591733⟩

• Communication dans un congrès

Sol-gel synthesis and thin films development of CuIn(Ga)S2 : an energy solar scavenging device used for wireless autonomous systems

Y. Bourlier, C. Lethien, R. Bernard, P. Roussel, D. Deresmes, Malek Zegaoui, M. Bouazaoui, Paul-Alain Rolland, N. Rolland

International Photovoltaic Technical Conference, PVTC 2011, " Thin Film & Advanced Solutions 2011 ", 2011, Aix-en-Provence, France. ⟨hal-00591388⟩

• Article dans une revue

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Xiaohui Tang, Christophe Krzeminski, Aurelien Lecavelier Des Etangs-Levallois, Zhenkun Chen, Emmanuel Dubois, Erich Kasper, Alim Karmous, Nicolas Reckinger, Denis Flandre, Laurent A. Francis, Jean-Pierre Collinge, Jean-Pierre Raskin

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge…

Nano Letters, 2011, 11, pp.4520-4526. ⟨10.1021/nl202434k⟩. ⟨hal-00640212v2⟩

• Article dans une revue

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

N. Reckinger, Xing Tang, Emmanuel Dubois, G. Larrieu, D. Flandre, J.P. Raskin, A. Afzalian

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of…

Applied Physics Letters, 2011, 98 (11), pp.1121021. ⟨10.1063/1.3567546⟩. ⟨hal-00579075⟩

• Article dans une revue

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger, C. Poleunis, Emmanuel Dubois, C.A. Dutu, X.H. Tang, A. Delcorte, J.P. Raskin

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2−x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at…

Applied Physics Letters, 2011, 99 (1), pp.012110. ⟨10.1063/1.3608159⟩. ⟨hal-00639859⟩

• Article dans une revue

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

S.R. Plissard, G. Larrieu, X. Wallart, P. Caroff

Nanotechnology, 2011, 22, pp.275602-1-7. ⟨10.1088/0957-4484/22/27/275602⟩. ⟨hal-00597081⟩

• Article dans une revue

Microwave properties of Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3 hetero layered films directly sputtered on Si up to 50 GHz

L.H. Yang, G.S. Wang, X.L. Dong, Freddy Ponchel, Denis Remiens

Journal of the American Ceramic Society, 2011, 94, pp.2262-2265. ⟨10.1111/j.1551-2916.2011.04610.x⟩. ⟨hal-00639934⟩

• Article dans une revue

Epitaxial GaAs for X-ray imaging

G. C. Sun, R. Rao, S. Makham, J. C. Bourgoin, X. Y. Zhang, R. Gohier, F. Masiello, J. Haertwig, J. Baruchel, C. Ponchut, Andrea Balocchi, Xavier Marie, O. Gilard, Isabelle Roch-Jeune, J. C. Pesant

To be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point defects in variable concentrations depending on the growth mode and the…

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 633 (1), pp.S65-S68. ⟨10.1016/j.nima.2010.06.123⟩. ⟨hal-01233828⟩