Publications

• Article dans une revue

Wavelength and beam launching effects on silica optical fiber in local area networks

H. Mrabet, Iyad Dayoub, R. Attia, W. Hamouda

Optics Communications, 2010, 283, pp.4234-4241. ⟨10.1016/j.optcom.2010.06.034⟩. ⟨hal-00549472⟩

• Article dans une revue

Shielded cables transfer impedance measurements

B. Demoulin, L. Kone

IEEE Electromagnetic Compatibility Society Newsletter, 2010, _, pp.38-45. ⟨hal-00567898⟩

• Article dans une revue

Kinetics of RPECVD organosilicon polymer post-treatment in a N2/O2 microwave plasma remote afterglow

S. Abou Rich, V. Mille, Céline Vivien, S. Godey, P. Supiot

Plasma Processes and Polymers, 2010, 7, pp.775-784. ⟨10.1002/ppap.200900185⟩. ⟨hal-00549497⟩

• Article dans une revue

Enhancement of biosensing performance in a droplet-based bioreactor by in situ microstreaming

O. Ducloux, E. Galopin, Farzam Zoueshtiagh, A. Merlen, V. Thomy

Biomicrofluidics, 2010, 4, pp.011102-1-5. ⟨10.1063/1.3310930⟩. ⟨hal-00549490⟩

• Article dans une revue

Synchronization sensitivity of block-IFDMA systems

E.P. Simon, D.P. Gaillot, Virginie Degardin

IEEE Transactions on Wireless Communications, 2010, 9, pp.256-267. ⟨10.1109/TWC.2010.01.090173⟩. ⟨hal-00549481⟩

• Article dans une revue

AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, Jean-Claude de Jaeger, Christophe Gaquière, Y. Cordier, F. Semond

IEEE Transactions on Electron Devices, 2010, 57, pp.1497-1503. ⟨10.1109/TED.2010.2048792⟩. ⟨hal-00549455⟩

• Article dans une revue

Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical-thermal model

Xing Tang, Michel Rousseau, N. Defrance, Virginie Hoel, A. Soltani, R. Langer, Jean-Claude de Jaeger

For gallium nitride (GaN) based microwave power devices, the thermal behavior due to the self-heating effect constitutes a main limitation because the power dissipation is very high. For this study, a predictive physical-thermalmodel has been developed to analyze the physical and thermal phenomena…

Physica Status Solidi A (applications and materials science), 2010, 207, pp.1820-1826. ⟨10.1002/pssa.200925321⟩. ⟨hal-00549464⟩

• Article dans une revue

Materials selection procedure for RF-MEMS

G. Guisbiers, E. Herth, Bernard Legrand, N. Rolland, T. Lasri, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.1792-1795. ⟨10.1016/j.mee.2009.10.016⟩. ⟨hal-00549627⟩

• Article dans une revue

Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

Ophélie Lancry, Emmanuelle Pichonat, Julien Réhault, Myriam Moreau, Raphaël Aubry, Christophe Gaquière

We report on the development of Time-resolved Ultraviolet Micro-Raman Scattering to measure transient self-heating effects in semiconductor devices. Temperature measurements are performed on AlGaN/GaN High-electron-mobility transistors (HEMTs) grown on SiC substrate. Ultraviolet excitation probes…

Solid-State Electronics, 2010, 54, pp.1434 - 1437. ⟨10.1016/j.sse.2010.05.029⟩. ⟨hal-00514166⟩

• Communication dans un congrès

Calculs de champs acoustiques à l'harmonique 2 par décomposition en faisceaux gaussiens

François Vander Meulen, Lionel Haumesser, Jérôme Fortineau, Olivier Bou Matar

Dans le cadre de l'approximation quasi-linéaire, une solution de l'équation KZK peut être obtenue par la méthode des approximations successives qui, dans ce cas,peut être obtenue par la convolution de la fonction source et d'une fonction de Green de forme gaussienne. Wen et Breazeale…

10ème Congrès Français d'Acoustique, Apr 2010, Lyon, France. ⟨hal-00539678⟩