Publicaciones

• COMM

On line wire diagnosis by modified spread spectrum time domain reflectometry

A. Lelong, M. Olivas-Carrion, Virginie Degardin, M. Lienard

Progress in Electromagnetics Research Symposium, PIERS 2008, 2008, United States. pp.182-186. ⟨hal-00361135⟩

• COMM

Band gaps in a phononic crystal constituted by cylindrical dots on a homogeneous plate

Bahram Djafari-Rouhani, Yan Pennec, H. Larabi, Jerome O. Vasseur, Anne-Christine Hladky

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, France. pp.57-62, ⟨10.1121/1.2932724⟩. ⟨hal-00361116⟩

• OTHER

Composants nanométriques balistiques de la filière InGaAs/InAlAs/InP pour applications hautes fréquences

C. Gardes

2008. ⟨hal-00362086⟩

• OTHER

Etude des propriétés remarquables de nanofils optiques InP/polymère en vue de la réalisation de fonctions optoélectroniques hyperfréquences

Michèle Carette

2008. ⟨hal-00362115⟩

• COMM

An all-dielectric route for terahertz cloaking

D.P. Gaillot, Charles Croënne, D. Lippens

Photonics Europe 2008, Metamaterials III, 2008, France. pp.69871K-1-8, ⟨10.1117/12.780540⟩. ⟨hal-00360464⟩

• COMM

Industrial MHEMT technologies for 80-220 GHz applications

D. Smith, Gilles Dambrine, J. Orlhac

3rd European Microwave Integrated Circuits Conference, EuMIC 2008, 2008, Netherlands. pp.214-217, ⟨10.1109/EMICC.2008.4772267⟩. ⟨hal-00362370⟩

• COMM

Film thickness determination by laser ultrasonics

M. Lemaire, Frédéric Jenot, Mohammadi Ouaftouh, Wei-Jiang Xu, Marc Duquennoy, Mohamed Ourak, R. Cote, R. Salenbien, B. Sarens, W. Lauriks, C. Glorieux

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, France. pp.2511-2516, ⟨10.1121/1.2933657⟩. ⟨hal-00361160⟩

• ART

Side-gated transport in focused-ion-beam-fabricated multilayered graphene nanoribbons

J.F. Dayen, A. Mahmood, D.S. Golubev, I. Roch-Jeune, P. Salles, Erik Dujardin

A resist-less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer-scale planar device in ultrathin graphitic disks is demonstrated by producing 50-nm-wide double side-gated transistor devices (see image). Experiments and theory suggest that the...

Small, 2008, 4 (6), pp.716-720. ⟨10.1002/smll.200700913⟩. ⟨hal-00360027⟩

• ART

Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap

N. Reckinger, Xing Tang, V. Bayot, Dmitri Yarekha, Emmanuel Dubois, S. Godey, X. Wallart, G. Larrieu, A. Łaszcz, J. Ratajczak, P.J. Jacques, J.P. Raskin

Journal of Applied Physics, 2008, 104 (10), pp.103523. ⟨10.1063/1.3010305⟩. ⟨hal-00356975⟩

• ART

Electrotunable band gaps of one- and two-dimensional photonic crystal structures based on silicon and liquid crystals

J. Arriaga, L. Dobrzynski, Bahram Djafari-Rouhani

Journal of Applied Physics, 2008, 104, pp.063108-1-7. ⟨10.1063/1.2975832⟩. ⟨hal-00357332⟩