Publicaciones

• Communication dans un congrès

Narrow band gap III-V based-FET for ultra low power high frequency analog applications

Gilles Dambrine, S. Bollaert, Yannick Roelens, A. Noudeviwa, Francois Danneville, A. Olivier, Nicolas Wichmann, L. Desplanque, X. Wallart, J. Grahn, G. Moschetti, P.A. Nilsson, M. Malmkvist, E. Lefebvre

67th Device Research Conference, 2009, State College, PA, United States. ⟨10.1109/DRC.2009.5354961⟩. ⟨hal-00575689⟩

• Communication dans un congrès

Microsystems for flow control and tranfer : a challenge for CFD

A. Merlen

6th International Conference on Computational Heat and Mass Transfer, 2009, Guangzhou, China. ⟨hal-00575701⟩

• Chapitre d'ouvrage

Metal-semiconductor-metal photodiodes

Joseph Harari, V. Magnin

Decoster D., Harari J. Optoelectronic sensors, ISTE-Wiley, Chapter 5, 155-178, 2009. ⟨hal-00575793⟩

• Communication dans un congrès

Terahertz plasmonic waves launchers

Tahsin Akalin

12th International Symposium on Microwave and Optical Technology, ISMOT-2009, 2009, New Delhi, India. ⟨hal-00575699⟩

• Communication dans un congrès

InAlN-based HEMT for microwave applications

S.L. Delage, N. Sarazin, M.A. Di Forte-Poisson, J.C. Jacquet, C. Dua, E. Morvan, C. Giesen, M. Heuken, B. Schineller, J.F. Carlin, M. Gonschorek, N. Grandjean, M. Py, A. Georgakilas, E. Iliopoulos, G. Konstantinidis, K. Cico, K. Fröhlich, Jean-Claude de Jaeger, Christophe Gaquière, E. Kohn, M. Alomari, F. Medjoub, J. Kuzmik, D. Pogany, G. Pozzovivo

8th Topical Workshop on Heterostructure Microelectronics, TWHN 2009, 2009, Nagano, Japan. ⟨hal-00575414⟩

• Communication dans un congrès

Clustering of channel parameters by block diagonal matrix decomposition

E. Tanghue, W. Joseph, M. Liénard, A. Nasr, P. Stefanut, D.P. Gaillot, Pierre Degauque, L. Martens

European Cooperation in Science and Technology (COST) 2100 Meeting, TD(09) 712, 2009, Braunschweig, Germany. ⟨hal-00575448⟩

• Communication dans un congrès

Modulation gigahertz sur porteuse térahertz accordable générée par photomélange aux longueurs d'ondes télécoms

Matthieu Martin, Juliette Mangeney, Paul Crozat, Yannick Chassagneux, Raffaele Colombelli, Laurent Vivien, Karine Blary, Jean-Francois Lampin

Horizons de l'Optique, OPTIQUE Lille 2009, 2009, Villeneuve d'Ascq, France. ⟨hal-00575451⟩

• Communication dans un congrès

Synthèse et propriétés électriques de la jonction moléculaire Si/SiO2/σ-C60-σ/Hg

David Guérin, S. Lenfant, D. Vuillaume

Colloque Matériaux et Nanostrutures π-conjugés, MNPC09, 2009, Arcachon, France. ⟨hal-00575266⟩

• Article dans une revue

AlGaN/GaN MISHEMT with hBN as gate dielectric

J.C. Gerbedoen, Ali Soltani, M. Mattalah, M. Moreau, P. Thevenin, Jean-Claude de Jaeger

Metal/Insulator/Semiconductor AlGaN/GaN High Electron Mobility Transistors (MISHEMTs) on sapphire substrate were fabricated with hexagonal Boron Nitride (hBN) thin film as gate dielectric. The hBN thin film, deposited by MW-PECVD, is an insulator permitting to obtain a low leakage current gate, an...

Diamond and Related Materials, 2009, 18, pp.1039 - 1042. ⟨10.1016/j.diamond.2009.02.018⟩. ⟨hal-00435395⟩

• Article dans une revue

Molecular dynamics simulations of the solid phase epitaxy of Si : growth mechanism and orientation effects, simulations en dynamique moléculaire de l'épitaxie en phase solide du silicium: mécanismes de croissance et influence de l'orientation cristalline

E. Lampin, Christophe Krzeminski

The solid phase epitaxy of an amorphous layer on crystalline silicon is studied by means of molecular dynamics. Three stacks of 5120, 4928, and 5184 atoms respectively oriented along the [100], [110], and [111] directions are annealed with the Tersoff interatomic potential. The regrowth proceeds...

Journal of Applied Physics, 2009, 106, pp.063519. ⟨10.1063/1.3211972⟩. ⟨hal-00471990v2⟩