Publicaciones

• Article dans une revue

Elastic properties of finite three-dimensional solid phononic-crystal slabs

R. Sainidou, Bahram Djafari-Rouhani, Jerome O. Vasseur

Photonics and Nanostructures - Fundamentals and Applications, 2008, 6, pp.122-126. ⟨10.1016/j.photonics.2007.10.001⟩. ⟨hal-00357785⟩

• Article dans une revue

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, Sébastien Chenot, O. Tottereau, J. Massies, P. Gibart

Journal of Crystal Growth, 2008, 310, pp.948-954. ⟨10.1016/j.jcrysgro.2007.11.161⟩. ⟨hal-00357273⟩

• Article dans une revue

Location and communication using cooperative radar system dedicated to guided transports

Yassin El Hillali, C. Tatkeu, Atika Rivenq, Jean-Michel Rouvaen, J.P. Ghys

Transportation research. Part C, Emerging technologies, 2008, 16, pp.141-152. ⟨10.1016/j.trc.2007.07.008⟩. ⟨hal-00356903⟩

• Article dans une revue

Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy

M. Gassoumi, J.M. Bluet, G. Guillot, Christophe Gaquière, H. Maaref

Materials Science and Engineering: C, 2008, 28, pp.787-790. ⟨10.1016/j.msec.2007.10.068⟩. ⟨hal-00357801⟩

• Article dans une revue

Counting statistics of single electron transport in a semiconductor quantum dot

S. Gustavsson, R. Leturcq, B. Simovic, R. Schleser, T. Ihn, P. Studerus, K. Ensslin, D.C. Driscoll, A.C. Gossard

Advances in Solid State Physics, 2008, 46, pp.31-43. ⟨10.1007/978-3-540-38235-5_3⟩. ⟨hal-00357788⟩

• Article dans une revue

Response concerning ‘On the interpretation of colloidal quantum dot absorption spectra

Rolf Koole, Guy Allan, Christophe Delerue, Daniel Vanmaekelbergh, Arjan J Houtepen, Andries Meijerink

Response concerning ‘On the interpretation of colloidal quantum dot absorption spectra'. Small, 2008, 4, pp.1869-1870. ⟨10.1002/smll.200800488⟩. ⟨hal-00357387⟩

• Article dans une revue

Microscopic mechanics of biomolecules in living cells

F. Cleri

Scientific Modeling and Simulations, 2008, 15, pp.339-362. ⟨10.1007/s10820-008-9104-2⟩. ⟨hal-00357373⟩

• Article dans une revue

New developments on diamond photodetector for VUV solar observations

Ali Benmoussa, Ali Soltani, Ken Haenen, Udo Kroth, Vincent Mortet, Hassan Ali Barkad, David Bolsée, Christian Hermans, M. Richter, Jean-Claude de Jaeger, Jean-François Hochedez

A new large-size metal–semiconductor–metal photoconductor device of 4.6 mm in diameter based on diamond material has been reprocessed and characterized in the vacuum-ultraviolet (VUV) wavelength range. The metal finger contacts have been processed to 2 µm in width with spacing between the contacts...

Semiconductor Science and Technology, 2008, 23 (3), pp.035026. ⟨10.1088/0268-1242/23/3/035026⟩. ⟨hal-00357795⟩

• Article dans une revue

A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes : influence of direct quantum tunnelling and temperature

E. Pascual, R. Rengel, N. Reckinger, Xing Tang, V. Bayot, Emmanuel Dubois, M.J. Martin

In this paper we present a Monte Carlo investigation of charge transport-including quantum tunnelling effects in fabricated back-to-back n-type Schottky barriers in the reverse bias regime. The effect of the variation of the temperature over the current density and over different internal...

Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCTS‐15), 5 (1), pp.119-122. ⟨10.1002/pssc.200776519⟩. ⟨hal-04710009⟩

• Article dans une revue

1.55 µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

Kianhuan Tan, Soon Fatt Yoon, Wan Khai Loke, Satrio Wicaksono, Zhichuan Xu, Tien Khee Ng, Kim Luong Lew, N. Saadsaoud, Malek Zegaoui, Didier Decoster, Jean Chazelas

We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was...

Applied Physics Letters, 2008, 92 (11), pp.113513-1-3. ⟨10.1063/1.2898507⟩. ⟨hal-00357300⟩