Publicaciones

Affichage de 11441 à 11450 sur 16101


  • Article dans une revue

Response concerning ‘On the interpretation of colloidal quantum dot absorption spectra

Rolf Koole, Guy Allan, Christophe Delerue, Daniel Vanmaekelbergh, Arjan J Houtepen, Andries Meijerink

Response concerning ‘On the interpretation of colloidal quantum dot absorption spectra'. Small, 2008, 4, pp.1869-1870. ⟨10.1002/smll.200800488⟩. ⟨hal-00357387⟩

  • Article dans une revue

Microscopic mechanics of biomolecules in living cells

F. Cleri

Scientific Modeling and Simulations, 2008, 15, pp.339-362. ⟨10.1007/s10820-008-9104-2⟩. ⟨hal-00357373⟩

  • Article dans une revue

New developments on diamond photodetector for VUV solar observations

Ali Benmoussa, Ali Soltani, Ken Haenen, Udo Kroth, Vincent Mortet, Hassan Ali Barkad, David Bolsée, Christian Hermans, M. Richter, Jean-Claude de Jaeger, Jean-François Hochedez

A new large-size metal–semiconductor–metal photoconductor device of 4.6 mm in diameter based on diamond material has been reprocessed and characterized in the vacuum-ultraviolet (VUV) wavelength range. The metal finger contacts have been processed to 2 µm in width with spacing between the contacts...

Semiconductor Science and Technology, 2008, 23 (3), pp.035026. ⟨10.1088/0268-1242/23/3/035026⟩. ⟨hal-00357795⟩

  • Article dans une revue

1.55 µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

Kianhuan Tan, Soon Fatt Yoon, Wan Khai Loke, Satrio Wicaksono, Zhichuan Xu, Tien Khee Ng, Kim Luong Lew, N. Saadsaoud, Malek Zegaoui, Didier Decoster, Jean Chazelas

We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was...

Applied Physics Letters, 2008, 92 (11), pp.113513-1-3. ⟨10.1063/1.2898507⟩. ⟨hal-00357300⟩

  • Communication dans un congrès

Imaging the electron local density of states inside buried semiconductor quantum rings

B. Hackens, F. Martins, M.G. Pala, H. Sellier, T. Ouisse, X. Wallart, S. Bollaert, A. Cappy, V. Bayot, S. Huant

29th Conference on the Physics of Semiconductors, Rio de Janeiro, July 27- August 1, 2008, Jul 2008, Rio de Janeiro, Brazil. ⟨hal-00392551⟩

  • Communication dans un congrès

Superfocusing with THz strip plasmonics and Si-nanowires for near-field microscopy

Tahsin Akalin, Emilien Peytavit, D. Hourlier-Bahloul, Jean-Francois Lampin

Gordon Research Conference : PLASMONICS, Optics at the Nanoscale, 2008, Tilton, NH, United States. ⟨hal-00361533⟩

  • Communication dans un congrès

Electron microscopy of silicides formation in Schottky barrier contacts to electronic devices

J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, N. Reckinger, Xing Tang, G. Larrieu, Emmanuel Dubois

XIII International Conference on Electron Microscopy, EM'2008, 2008, Cracow-Zakopane, Poland. ⟨hal-00361545⟩

  • Communication dans un congrès

Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate

Aurélie Lecestre, Emmanuel Dubois, A. Villaret, P. Coronel, T. Skotnicki

ESS-Fringe Poster Session of 2008 European Solid-State Device Research Conference, ESSDERC 2008, 2008, Edinburgh, Scotland, United Kingdom. ⟨hal-00361551⟩