Publicaciones

• ART

High-efficiency uni-travelling-carrier photomixer at 1.55 μm and spectroscopy application up to 1.4 THz

Alexandre Beck, Guillaume Ducournau, Mohammed Zaknoune, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin, Francis Mollot, Francis Hindle, Chun Yang, Gaël Mouret

The fabrication of InGaAs/InP uni-travelling-carrier photodiodes integrated with broadband horn antennas and demonstration of photomixing up to 1.8 THz are reported. A radiated power of 1.1 µW at 940 GHz was measured for a photocurrent of only 2.75 mA (50 mW optical power), demonstrating the high...

Electronics Letters, 2008, 44, pp.1320-1322. ⟨10.1049/el:20082219⟩. ⟨hal-00356950⟩

• ART

Integrated 3D silicon electrodes for electrochemical sensing in microfluidic environments : application to single cell characterization

V. Senez, E. Lennon, S. Ostrovidov, T. Yamamoto, H. Fujita, Y. Sakai, T. Fujii

IEEE Sensors Journal, 2008, 8, pp.548-557. ⟨10.1109/JSEN.2008.918948⟩. ⟨hal-00356897⟩

• ART

Comparative Sb and As segregation at the InP on GaAsSb interface

X. Wallart, S. Godey, Y. Douvry, L. Desplanque

Applied Physics Letters, 2008, 93, pp.123119-1-3. ⟨10.1063/1.2991299⟩. ⟨hal-00356947⟩

• ART

Resistivity and surface states density of n and p type silicon nanowires

Francois Vaurette, J.P. Nys, D. Deresmes, B. Grandidier, D. Stiévenard

Journal of Vacuum Science and Technology, 2008, 26, pp.945-948. ⟨10.1116/1.2908438⟩. ⟨hal-00357381⟩

• ART

Suppression of decoherence in fast-atom diffraction at surfaces

F. Aigner, N. Simonovic, B. Solleder, L. Wirtz, J. Burgdörfer

Physical Review Letters, 2008, 101, pp.253201-1-4. ⟨10.1103/PhysRevLett.101.253201⟩. ⟨hal-00357779⟩

• ART

Molecular-scale electronics

D. Vuillaume

Comptes Rendus. Physique, 2008, 9, pp.78-94. ⟨10.1016/j.crhy.2007.10.014⟩. ⟨hal-00357286⟩

• ART

Passive photonic components using InP optical wire technology

Marie Lesecq, Sophie Maricot, Jean-Pierre Vilcot, Maxime Beaugeois

The authors present the design, fabrication and characterisation of passive photonic components using InP optical wire technology. These components are straight and curved waveguides as well as Y-junctions. Their ultimate use is to be integrated within active nanophotonic functions and this is...

IET Optoelectronics, 2008, 2, pp.69-75. ⟨10.1049/iet-opt:20060104⟩. ⟨hal-00357302⟩

• ART

Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire

T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennegues, B. Vinter, M. Leroux

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.075308-1-10. ⟨10.1103/PhysRevB.77.075308⟩. ⟨hal-00356987⟩

• ART

Preparation of Electrochemical and Surface Plasmon Resonance Active Interfaces: Deposition of Indium Tin Oxide on Silver Thin Films

Sabine Szunerits, Xavier Castel, Rabah Boukherroub

Journal of Physical Chemistry C, 2008, 112, pp.10883-10888. ⟨hal-00402915⟩

• ART

Estimation of dynamic parameters of overthreshold parametric phase conjugation of ultrasound in magnetostrictive ferrites according to data of quasi-static measurements

Andrey Brysev, Philippe Pernod, Vladimir L. Preobrazhensky

A simple method for testing ferrite samples intended to be active elements of parametric phase conjugator of ultrasound was proposed and experimentally approved. The method allows one to estimate such dynamic parameters of parametric phase conjugator of ultrasound as the parametric amplification...

Physics of Wave Phenomena, 2008, 16, pp.80-85. ⟨10.3103/S1541308X08020027⟩. ⟨hal-00800675⟩