Publicaciones

• Communication dans un congrès

Electron microscopy of silicides formation in Schottky barrier contacts to electronic devices

J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, N. Reckinger, Xing Tang, G. Larrieu, Emmanuel Dubois

XIII International Conference on Electron Microscopy, EM'2008, 2008, Cracow-Zakopane, Poland. ⟨hal-00361545⟩

• Autre publication scientifique

Composants nanométriques balistiques de la filière InGaAs/InAlAs/InP pour applications hautes fréquences

C. Gardes

2008. ⟨hal-00362086⟩

• Communication dans un congrès

Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate

Aurélie Lecestre, Emmanuel Dubois, A. Villaret, P. Coronel, T. Skotnicki

ESS-Fringe Poster Session of 2008 European Solid-State Device Research Conference, ESSDERC 2008, 2008, Edinburgh, Scotland, United Kingdom. ⟨hal-00361551⟩

• Communication dans un congrès

Code-algorithm association performances for coded radar system

J. Zaidouni, Atika Rivenq, Smail Niar, Jean-Michel Rouvaen

3rd International Conference on Information and Communication Technologies : from Theory to Applications, ICTTA'08, 2008, Syria. pp.1-5, ⟨10.1109/ICTTA.2008.4530063⟩. ⟨hal-00376220⟩

• Communication dans un congrès

An all-dielectric route for terahertz cloaking

D.P. Gaillot, Charles Croënne, D. Lippens

Photonics Europe 2008, Metamaterials III, 2008, France. pp.69871K-1-8, ⟨10.1117/12.780540⟩. ⟨hal-00360464⟩

• Autre publication scientifique

Etude des propriétés remarquables de nanofils optiques InP/polymère en vue de la réalisation de fonctions optoélectroniques hyperfréquences

Michèle Carette

2008. ⟨hal-00362115⟩

• Communication dans un congrès

Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance

G. Larrieu, Emmanuel Dubois, Dmitri Yarekha, N. Breil, N. Reckinger, Xing Tang, J. Ratajczak, A. Laszcz

European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, _, France. ⟨hal-00361543⟩

• Communication dans un congrès

Body-biasing control on zero-temperature-coefficient in partially depleted SOI MOSFET

M. El Kaamouchi, Gilles Dambrine, M. Si Moussa, M. Emam, D. Vanhoenacker-Janvier, J.P. Raskin

8th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2008, 2008, United States. pp.114-117, ⟨10.1109/SMIC.2008.35⟩. ⟨hal-00360407⟩

• Article dans une revue

A 7-dB 43-GHz CMOS distributed amplifier on high resistivity SOI substrates

C. Pavageau, M. Si Moussa, J.P. Raskin, D. Vanhoenacker-Janvier, N. Fel, J. Russat, L. Picheta, Francois Danneville

IEEE Transactions on Microwave Theory and Techniques, 2008, 56, pp.587-598. ⟨10.1109/TMTT.2008.916930⟩. ⟨hal-00356663⟩

• Article dans une revue

Side-gated transport in focused-ion-beam-fabricated multilayered graphene nanoribbons

J.F. Dayen, A. Mahmood, D.S. Golubev, I. Roch-Jeune, P. Salles, Erik Dujardin

A resist-less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer-scale planar device in ultrathin graphitic disks is demonstrated by producing 50-nm-wide double side-gated transistor devices (see image). Experiments and theory suggest that the...

Small, 2008, 4 (6), pp.716-720. ⟨10.1002/smll.200700913⟩. ⟨hal-00360027⟩