Publicaciones

• Communication dans un congrès

Design of low frequency acoustic sensor for wheat dough study in kneading and fermentation phases

Georges Nassar, A. Skaf, Fabrice Lefebvre, Bertrand Nongaillard, R. Dib

2006, pp.1153-1163. ⟨hal-00138738⟩

• Article dans une revue

Effect of a Se monolayer on interface properties between Al2O3 and n-type Si(100)

G. Larrieu, M. Tao, N. Moumen, E. Moldonado, W.P. Kirk, G. Song, W. Bai, D.L. Kwong

Transactions of the Electrochemical Society, 2006, 1, pp.371. ⟨hal-00138658⟩

• Article dans une revue

A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

R. Rengel, M.J. Martin, T. Gonzalez, J. Mateos, D. Pardo, Gilles Dambrine, J.P. Raskin, Francois Danneville

IEEE Transactions on Electron Devices, 2006, 53, pp.523-532. ⟨hal-00126521⟩

• Communication dans un congrès

Integration of ultra wide band high pass filter using high performance inductors in advanced high resistivity SOI CMOS technology

F. Gianesello, D. Gloria, C. Raynaud, C. Tinella, P. Vincent, F. Saguin, S. Boret, C. Clement, B. van Haaren, J.M. Fournier, Gilles Dambrine, P. Benech

2006, pp.248-251. ⟨hal-00126802⟩

• Article dans une revue

Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions

B. Hackens, L. Gence, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot

Physica E: Low-dimensional Systems and Nanostructures, 2006, 34, pp.515-518. ⟨hal-00154922⟩

• Article dans une revue

Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shchepetov, Yannick Roelens, S. Bollaert, A. Cappy, S. Rumyantsev

Applied Physics Letters, 2006, 89, pp.131926-1-3. ⟨hal-00154920⟩

• Article dans une revue

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

Matthieu Werquin, Damien Ducatteau, Nicolas Vellas, E. Delos, Yvon Cordier, Raphaël Aubry, Christophe Gaquière

DC- and RF-pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the potential of...

Microwave and Optical Technology Letters, 2006, 48, pp.2303-2305. ⟨10.1002/mop.21897⟩. ⟨hal-00154928⟩

• Thèse

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences millimétriques, 130 nm SOI CMOS technology for microwaves applications

Christophe Pavageau

La technologie CMOS SOI (« Silicon On Insulator ») a déjà montré son intérêt pour les circuits numériques par rapport à la technologie CMOS sur substrat massif (« bulk »). Avec l'entrée des technologies CMOS dans l'ère des dimensions nanométriques, les transistors atteignent des..., Silicon On Insulator (SOI) CMOS technology has already shown good performances for digital applications compared to bulk CMOS technology. At nanometer-scale, SOI CMOS transistors exhibit very high cut-off frequencies, enabling the design of millimeter-wave integrated circuits and therefore the...

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2005. Français. ⟨NNT : ⟩. ⟨tel-00011744v2⟩

• Communication dans un congrès

About the role played by the principles in the physics and mathematics by J.H. Poincaré

Raffaele Pisano

AIF Workshop Science & Teaching, 6th Dec., AIF Latina & GB Grassi Latina, Dec 2005, Latina, Italy. ⟨hal-04518908⟩

• Article dans une revue

Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

E. Lampin, Fuccio Cristiano, Youness Lamrani, Damien Connétable

In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised parameters to non-amorphizing implants. The model describes the small clusters, the {113} defects and the dislocation loops. In the first...

Materials Science and Engineering: B, 2005, 124-125, pp.397-400. ⟨10.1016/j.mseb.2005.08.032⟩. ⟨hal-03599806⟩