Publicaciones
Affichage de 13091 à 13100 sur 16100
On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs
R. Rengel, M.J. Martin, G. Pailloncy, Gilles Dambrine, Francois Danneville
2005, pp.745-748. ⟨hal-00125309⟩
Dual-wavelength multimode fibre transmission of digital and RF signals
C. Sion, A. Roche, A. da Costa de Matos, Christophe Loyez, C. Lethien, R. Hamelin, Jean-Pierre Vilcot
12th NEFERTITI Workshop PWCom, 2005, Sähörus, Sweden. ⟨hal-00125337⟩
94 GHz high power performances of InAs0.4P0.6 channel HEMTs on InP
F Medjdoub, M. Zaknoune, X. Wallart, Christophe Gaquière, D. Theron
Electronics Letters, 2005, 41, pp.63-64. ⟨hal-00126459⟩
Simulation Monte Carlo du transport quantique dans les dispositifs optoélectroniques à transistions inter-sous-bandes
Olivier Bonno, Jean-Luc Thobel, François Dessenne
1ères Journées du GDR Térahertz, 2005, Montpellier, France. ⟨hal-00125904⟩
Electron emission from surfaces induced by HCI and lasers
C. Lemell, X.M. Tong, K. Tokesi, L. Wirtz, J. Burgdorfer
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2005, 235, pp.425-430. ⟨hal-00126427⟩
A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s optical receivers
G. Wolf, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, Gilles Dambrine, H. Happy
2005, pp.93-95. ⟨hal-00125302⟩
Growth on nanomesas as a template for perfect lateral organization of semiconductor Quantum Dots : early stages of capping process and role of stressors
C. Meynier, C. Priester
Self-Organised Nanostructures, 2005, Cargese, France. ⟨hal-00125388⟩
First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology
M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger, Christophe Gaquière
Microwave and Optical Technology Letters, 2005, 46, pp.311-315. ⟨hal-00126457⟩
Strained heteroepitaxy on nanomesas : a way toward perfect lateral organization of quantum dots
C. Priester, M. Bavencoffe, E. Houdard
Journal of Crystal Growth, 2005, 275, pp.305-316. ⟨hal-00125383⟩
Impact of the intrinsic parameters of the dielectric on the leakage current
G. Larrieu, M. Tao
2nd International Workshop on Advanced Gate Stack Technology, 2005, Austin, TX, United States. ⟨hal-00138407⟩