Publicaciones

• Article dans une revue

Experimental and theoretical investigation into the difficulties of thallium incorporation into III-V semiconductors

R. Beyneton, G. Grenet, P. Regreny, M. Gendry, G. Hollinger, B. Canut, C. Priester

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72, pp.125209-1-10. ⟨hal-00125352⟩

• Article dans une revue

Scanning tunneling microscopy and spectroscopy of conjugated oligomers weakly bonded on Si(100) surfaces : a theoretical study

M. Dubois, Christophe Delerue, Guy Allan

We present theoretical simulations of the Scanning Tunneling Microscopy (STM) of thienylenevinylene oligomers physisorbed on a Si(100) surface. Calculations based on a tight-binding method including self-consistency for the molecule are used to predict STM imaging and spectroscopy. We obtain that...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 71, pp.165435-1-6. ⟨10.1103/PhysRevB.71.165435⟩. ⟨hal-00126419⟩

• Article dans une revue

Polarization reversal of ferroelectric small particles : surface polarization enhancement and bound charges effects

L. Baudry

Applied Physics Letters, 2005, 87, pp.262903. ⟨hal-00125350⟩

• Article dans une revue

Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT

A. Sozza, C. Dua, E. Morvan, B. Grimbert, M.A. Diforte-Poisson, S.L. Delage, E. Zanoni

Electronics Letters, 2005, 41, pp.927-928. ⟨hal-00126456⟩

• Article dans une revue

Temporal analysis of tissue displacement induced by a transient ultrasound radiation force

S. Callé, J.P. Remenieras, Olivier Bou Matar, M.E. Hachemi, F. Patat

Journal of the Acoustical Society of America, 2005, 118, pp.2829-2840. ⟨10.1121/1.2062527⟩. ⟨hal-00247435⟩

• Article dans une revue

Reactive ion etching of a 20 nanometers tungsten gate using a SF$_6$/N$_2$ chemistry and hydrogen silsesquioxane hard mask resist

G. Larrieu, Emmanuel Dubois

This article reports on a direct method for patterning a tungsten gate in the decananometric range using high-resolution electron-beam lithography and reactive ion etching (RIE). Electron-beam lithography is based on the use of hydrogen silsesquioxane for its remarkable properties as a negative-...

Journal of Vacuum Science and Technology, 2005, 23 (5), pp.2046-2050. ⟨10.1116/1.2050654⟩. ⟨hal-00125635⟩

• Article dans une revue

Three-dimensionnal calculation of propagation losses in photonic crystal waveguides

S. Fasquel, Xavier Mélique, Olivier Vanbésien, D. Lippens

Optics Communications, 2005, 246 (1-3), pp.91-96. ⟨hal-00401300⟩

• Article dans une revue

Subcarrier radio signal transmission over multimode fibre for 60 GHz WLAN using a phase noise cancellation technique

Christophe Loyez, C. Lethien, K. Redha, Jean-Pierre Vilcot, Didier Decoster, N. Rolland, P. Rolland

Electronics Letters, 2005, 41, pp.91-92. ⟨hal-00125330⟩

• Communication dans un congrès

THz devices and applications : a survey of recent researchs

Laurent Chusseau, Jean-Francois Lampin, S. Bollaert, L. Duvillaret, J. Mangeney

13th European Gallium Arsenide and other Compound Semiconductors Application Symposium, GAAS, 2005, Paris, France. ⟨hal-00125317⟩

• Communication dans un congrès

InP based ballistic nanodevices

A. Cappy, J.S. Galloo, S. Bollaert, Yannick Roelens, J. Mateos, T. Gonzales, W. Knap

International Conference on Indium Phosphide and Related Materials, IPRM 2005, 2005, Glasgow, Scotland, United Kingdom. ⟨hal-00125316⟩