Publicaciones

• Article dans une revue

Targeted deletion of Kv4.2 eliminates I(to,f) and results in electrical and molecular remodeling, with no evidence of ventricular hypertrophy or myocardial dysfunction

W. Guo, W. E. Jung, Céline Marionneau, F. Aimond, H. Xu, K. A. Yamada, T. L. Schwarz, S. Demolombe, J. M. Nerbonne

Circulation Research, 2005, 97 (12), pp.1342-50. ⟨10.1161/01.RES.0000196559.63223.aa⟩. ⟨hal-02363774⟩

• Communication dans un congrès

A Bi-stable Micro-machined Piezoelectric Transducer for Mechanical to Electrical Energy Transformation

Karim Dogheche, B. Cavallier, P. Delobelle, L. Hirsinger, Eric Cattan, Denis Remiens, M. Marzencki, B. Charlot, Skandar Basrour, S. Ballandras

This paper presents a scavenging energy application of piezoelectric micro-machined ultrasonic transducers (pMUT). The micro power generator is composed by a silicon membrane (600µm diameter and 1µm thickness) with a 2µm thick PZT layer. The mechanical energy is converted to electrical energy...

Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP'05), June 1-3, 2005, Montreux, Switzerland. pp.303-304. ⟨hal-00009224⟩

• Article dans une revue

The effect of LaNiO3 bottom electrode thickness on ferroelectric and dielectric properties of (100) oriented PbZr0.53Ti0.47O3 films

G.S. Wang, Denis Remiens, Caroline Soyer, El Hadj Dogheche, Eric Cattan

The (1 0 0) oriented LaNiO3 (LNO) films with different thickness were prepared on SiO2/Si substrate by a modified metallorganic decomposition process. PbZr0.53Ti0.47O3 (PZT) films (∼1 μm) subsequently deposited on LNO by modified sol–gel process. The X-ray diffraction measurements show PZT films...

Journal of Crystal Growth, 2005, 284 (1-2), pp.184-189. ⟨10.1016/j.jcrysgro.2005.07.014⟩. ⟨hal-00130818⟩

• Article dans une revue

Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate

G. Larrieu, Emmanuel Dubois

This paper demonstrates the successful integration of Schottky barrier (SB) MOSFETs that feature platinum silicide (PtSi) source/drain and a tungsten midgap gate down to a length of 40 nm. SB MOSFETs are shown to steadily progress with respect to conventional highly doped source/drain with a...

IEEE Transactions on Electron Devices, 2005, 52 (12), pp.2720-2726. ⟨10.1109/TED.2005.859703⟩. ⟨hal-00138397⟩

• Communication dans un congrès

Adaptive multi-path channel estimation in CDMA based on prefiltering : combination with a linear equalizer

E. Simon, L. Ros

Proceedings of the 14th IST Mobile and Wireless Communications Summit, 2005, Dresden, Germany. ⟨hal-00247774⟩

• Communication dans un congrès

A radio over multimode fibre system based on a LO phase-noise cancellation for 60 GHz WLAN

Christophe Loyez, C. Lethien, N. Deparis, Jean-Pierre Vilcot, Didier Decoster, N. Rolland, P.A. Rolland

2005, 3 pp. ⟨hal-00126764⟩

• Communication dans un congrès

Jonctions silicium-molécules-métal réalisées par nanotransfer printing : synthèse chimique et propriétés électriques

David Guérin, C. Merckling, S. Lenfant, D. Vuillaume

Journées des Polymères Conducteurs, 2005, Nantes, France. ⟨hal-00126221⟩

• Communication dans un congrès

Molecular interactions of PTCDA on Si(100) and H-Si(100) surfaces : towards self-assembled molecular nanocristals

Francois Vaurette, T. Soubiron, B. Grandidier, J.P. Nys, X. Wallart, D. Stiévenard

Materials Research Society 2005 Fall Meeting, 2005, Boston, MA, United States. ⟨hal-00126448⟩

• Autre publication scientifique

Amélioration des transmissions vidéo MPEG-2 sur lignes ADSL basée sur une optimisation conjointe source/canal de la qualité vidéo

C. Goudemand

2005. ⟨hal-00126473⟩

• Communication dans un congrès

Composition modulation and local structure in strained diluted GaInNAs nitride alloy thin layers

C. Priester, A. Metsue

2005, pp.0891-EE10-29.1 - 0891-EE10-29.6. ⟨hal-00126205⟩